中文
English
K1869L-VB Product details
Back to previous pageProduct introduction：
Product Introduction
The K1869L-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high voltage applications. With a drain-source voltage (VDS) of 650V, the device can support a drain current (ID) of up to 7A, making it an excellent performer in applications requiring high voltage and medium current. Its on-resistance (RDS(ON) of 700mΩ@VGS=10V) ensures low power consumption during switching operations. Utilizing SJ_Multi-EPI technology, this MOSFET offers superior performance in thermal and electrical characteristics, making it suitable for a variety of power and control applications.
The K1869L-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high voltage applications. With a drain-source voltage (VDS) of 650V, the device can support a drain current (ID) of up to 7A, making it an excellent performer in applications requiring high voltage and medium current. Its on-resistance (RDS(ON) of 700mΩ@VGS=10V) ensures low power consumption during switching operations. Utilizing SJ_Multi-EPI technology, this MOSFET offers superior performance in thermal and electrical characteristics, making it suitable for a variety of power and control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 700mΩ (at VGS=10V)
- **ID**: 7A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 700mΩ (at VGS=10V)
- **ID**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications: K1869L-VB is widely used in multiple high-voltage applications, especially in switching power supplies, DC-DC converters, and motor drive systems. Its high voltage capability makes it superior in power electronic equipment, inverters, and photovoltaic power generation systems, and can effectively improve the energy efficiency and stability of the system. In addition, this MOSFET is also suitable for various industrial automation control fields, including power management and battery management systems, providing reliable performance and long life. In consumer electronics, K1869L-VB can be used in high-efficiency adapters and chargers to meet high power requirements while ensuring low energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
