中文
English
K17J65U-VB Product details
Back to previous pageProduct introduction：
Product Introduction
K17J65U-VB is a high-performance single N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. The product has a drain-source voltage (VDS) of up to 600V, suitable for operation in high voltage environments, and has good voltage resistance. K17J65U-VB uses SJ_Multi-EPI technology to provide extremely low on-resistance (RDS(ON) is 190mΩ@VGS=10V), making it excellent in power management and switching applications.
K17J65U-VB is a high-performance single N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. The product has a drain-source voltage (VDS) of up to 600V, suitable for operation in high voltage environments, and has good voltage resistance. K17J65U-VB uses SJ_Multi-EPI technology to provide extremely low on-resistance (RDS(ON) is 190mΩ@VGS=10V), making it excellent in power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 190mΩ (at VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 190mΩ (at VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications: K17J65U-VB is widely used in industrial and power electronic equipment, especially in high-voltage power converters and inverters. Its high drain-source voltage makes it superior in solar inverters and high-voltage DC power supplies, and can effectively handle high voltages from the grid or energy storage devices. At the same time, this MOSFET is also very suitable for use in motor drive and control circuits to provide stable power output. In addition, the high current capability of K17J65U-VB makes it widely used in LED lighting drivers and other consumer electronics that require high power processing, which can improve the energy efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
