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K17A65U-VB Product details

Product introduction:

K17A65U-VB Product Introduction

K17A65U-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. Its rated drain-source voltage (VDS) is 650V, which can meet the high voltage requirements in most industrial and consumer electronic devices. The device has a maximum drain current (ID) of 20A, making it suitable for a variety of load conditions. The threshold voltage (Vth) of K17A65U-VB is 3.5V, ensuring that it can be turned on at a lower gate voltage. In addition, when VGS is 10V, its on-resistance (RDS(ON)) is 160mΩ, which can effectively reduce energy loss and thus improve the overall efficiency of the system. This MOSFET adopts SJ_Multi-EPI technology, has superior thermal management performance and stability, and is suitable for demanding application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
K17A65U-VB Detailed parameter description

- **Model**: K17A65U-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples

K17A65U-VB has a wide range of applications in multiple fields and modules. Here are some specific examples:

1. **Switching power supply**: Due to its high withstand voltage and low on-resistance, K17A65U-VB is an ideal choice in switching power supply (SMPS), which can effectively improve power conversion efficiency and reduce heat loss to meet the needs of high-load applications.

2. **Motor drive**: In motor control, this MOSFET can be used in H-bridge circuits to drive DC motors or stepper motors, providing efficient power control for robots, automation equipment, etc.

3. **Inverter**: K17A65U-VB is suitable for solar inverters and uninterruptible power supply (UPS) systems, capable of withstanding high voltages and providing reliable power conversion, supporting the efficient use of renewable energy.

4. **Industrial control**: In industrial equipment, the device can be used for high-voltage switching and power control applications, supporting the stable operation of various control circuits and achieving efficient power management.

5. **Consumer electronics**: In various consumer electronics products, the K17A65U-VB can be used as a power switch in devices such as TVs, audio systems, and battery chargers to ensure efficient use of power.

In summary, the K17A65U-VB is a MOSFET suitable for high-voltage and high-current applications. It is widely used in multiple fields such as switching power supplies, motor drives, inverters, industrial control, and consumer electronics. It can meet the needs of modern electronic devices for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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