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K17A65D-VB Product details
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Product Introduction
K17A65D-VB is a high-performance single N-channel MOSFET in TO220F package, specially designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, suitable for operation in high voltage environments, meeting the needs of a variety of industrial and power applications. The MOSFET has a maximum drain current (ID) of 20A, ensuring stability and reliability under high power conditions. Its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), which makes the K17A65D-VB exhibit lower conduction losses during switching operations, improving the overall efficiency of the system. Using SJ_Multi-EPI technology, the device has excellent thermal performance and reliability, and can maintain stable performance under harsh working conditions.
K17A65D-VB is a high-performance single N-channel MOSFET in TO220F package, specially designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, suitable for operation in high voltage environments, meeting the needs of a variety of industrial and power applications. The MOSFET has a maximum drain current (ID) of 20A, ensuring stability and reliability under high power conditions. Its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), which makes the K17A65D-VB exhibit lower conduction losses during switching operations, improving the overall efficiency of the system. Using SJ_Multi-EPI technology, the device has excellent thermal performance and reliability, and can maintain stable performance under harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K17A65D-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 160mΩ (@VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: K17A65D-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 160mΩ (@VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules: K17A65D-VB is widely used in many fields, especially in high-voltage power management systems. It can be used as the main switching element in the switching power supply to improve energy efficiency and reduce heat loss, and is suitable for industrial power conversion, UPS systems and inverters. In addition, this MOSFET is also widely used in electric vehicle charging systems, which can effectively control current and ensure safety. In home appliances, K17A65D-VB can be used in motor drives and inverters to optimize motor starting and running performance. In short, with its high voltage tolerance and excellent thermal performance, K17A65D-VB has become an ideal choice for modern high-power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
