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K1772HYTR-E-VB Product details
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K1772HYTR-E-VB Product Introduction
K1772HYTR-E-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is as high as 30V, making it suitable for power management and switch control of various electronic products. This MOSFET has a low threshold voltage (Vth) of 1.7V, which can quickly turn on at a low gate voltage, showing excellent switching performance. Under different gate voltages, its on-resistance (RDS(ON)) performs well, which is 30mΩ at 2.5V and further reduced to 22mΩ at 4.5V, showing its excellent performance under low power consumption conditions. The maximum drain current (ID) is 6.8A, which enables it to have efficient current conduction capabilities in multiple applications. K1772HYTR-E-VB adopts shovel technology (Trench) to ensure its stability in high frequency and high temperature environments. It is one of the widely used components in modern electronic design.
K1772HYTR-E-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is as high as 30V, making it suitable for power management and switch control of various electronic products. This MOSFET has a low threshold voltage (Vth) of 1.7V, which can quickly turn on at a low gate voltage, showing excellent switching performance. Under different gate voltages, its on-resistance (RDS(ON)) performs well, which is 30mΩ at 2.5V and further reduced to 22mΩ at 4.5V, showing its excellent performance under low power consumption conditions. The maximum drain current (ID) is 6.8A, which enables it to have efficient current conduction capabilities in multiple applications. K1772HYTR-E-VB adopts shovel technology (Trench) to ensure its stability in high frequency and high temperature environments. It is one of the widely used components in modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Model**: K1772HYTR-E-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: K1772HYTR-E-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
Applications and modules
K1772HYTR-E-VB is widely used in many fields due to its excellent electrical performance, including:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, K1772HYTR-E-VB can be used in power management circuits to help improve the energy efficiency and endurance of the device.
2. **LED driver**: This MOSFET is suitable for LED lighting control circuits, which can quickly switch and adjust the LED brightness to ensure efficient light output.
3. **Motor control**: K1772HYTR-E-VB can be used in small motor drive applications, providing precise current control and starting functions, suitable for power tools and home appliances.
4. **Power switch**: In switching power modules, this MOSFET can be used as the main switching element to help achieve efficient energy conversion, especially suitable for DC-DC converter and adapter design.
5. **Low power application circuit**: Due to its low RDS(ON) value, K1772HYTR-E-VB is very suitable for low power circuit design, such as wireless communication and sensor networks, to ensure high performance and long operation.
In summary, K1772HYTR-E-VB has become an indispensable component in modern electronic product design with its high performance and versatility.
K1772HYTR-E-VB is widely used in many fields due to its excellent electrical performance, including:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, K1772HYTR-E-VB can be used in power management circuits to help improve the energy efficiency and endurance of the device.
2. **LED driver**: This MOSFET is suitable for LED lighting control circuits, which can quickly switch and adjust the LED brightness to ensure efficient light output.
3. **Motor control**: K1772HYTR-E-VB can be used in small motor drive applications, providing precise current control and starting functions, suitable for power tools and home appliances.
4. **Power switch**: In switching power modules, this MOSFET can be used as the main switching element to help achieve efficient energy conversion, especially suitable for DC-DC converter and adapter design.
5. **Low power application circuit**: Due to its low RDS(ON) value, K1772HYTR-E-VB is very suitable for low power circuit design, such as wireless communication and sensor networks, to ensure high performance and long operation.
In summary, K1772HYTR-E-VB has become an indispensable component in modern electronic product design with its high performance and versatility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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