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K1764-VB Product details
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K1764-VB Product Introduction
K1764-VB is a high-efficiency single N-channel MOSFET in SOT89 package. Its design is optimized for low voltage and medium current applications, with a maximum drain-source voltage (VDS) of 60V and the ability to withstand a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at a lower gate voltage. The on-resistance (RDS(ON)) of K1764-VB is 88mΩ and 76mΩ at gate voltages of 4.5V and 10V, respectively, enabling excellent electrical performance in switching applications. In addition, the maximum leakage current (ID) can reach 5.5A, making it ideal for a variety of high-efficiency power supplies and signal conditioning circuits.
K1764-VB is a high-efficiency single N-channel MOSFET in SOT89 package. Its design is optimized for low voltage and medium current applications, with a maximum drain-source voltage (VDS) of 60V and the ability to withstand a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at a lower gate voltage. The on-resistance (RDS(ON)) of K1764-VB is 88mΩ and 76mΩ at gate voltages of 4.5V and 10V, respectively, enabling excellent electrical performance in switching applications. In addition, the maximum leakage current (ID) can reach 5.5A, making it ideal for a variety of high-efficiency power supplies and signal conditioning circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ (@VGS=4.5V)
- 76mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 5.5A
- **Technology**: Trench
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ (@VGS=4.5V)
- 76mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 5.5A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
K1764-VB has significant advantages in applications in multiple fields. For example, in a switching power supply (SMPS), it can effectively control power conversion and improve the overall efficiency of the system, especially in current regulation and voltage stability. In addition, K1764-VB is also suitable for LED drivers, DC-DC converters (DC-DC), and battery management systems (BMS), providing reliable switching performance for these applications. In consumer electronics and communication equipment, due to its low conduction loss and fast response characteristics, it is an ideal choice for efficient signal switching and power regulation. The high efficiency and wide applicability of this MOSFET make it increasingly popular in modern electronic design.
K1764-VB has significant advantages in applications in multiple fields. For example, in a switching power supply (SMPS), it can effectively control power conversion and improve the overall efficiency of the system, especially in current regulation and voltage stability. In addition, K1764-VB is also suitable for LED drivers, DC-DC converters (DC-DC), and battery management systems (BMS), providing reliable switching performance for these applications. In consumer electronics and communication equipment, due to its low conduction loss and fast response characteristics, it is an ideal choice for efficient signal switching and power regulation. The high efficiency and wide applicability of this MOSFET make it increasingly popular in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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