K1717-VB SOT89-3 Product details
Product introduction:
K1717-VB is a high-performance single N-channel MOSFET in a SOT89 package designed for low-voltage applications. It has a drain-source voltage (VDS) of up to 60V, making it ideal for use in a variety of electronic devices that require high efficiency and miniaturized design. The device has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of 1.7V, which enables it to turn on quickly at a lower gate voltage. At a gate voltage of 4.5V, the on-resistance (RDS(ON)) of this MOSFET is 88mΩ, which decreases to 76mΩ at 10V, which makes it perform well under high-load conditions while effectively reducing power consumption. The maximum drain current (ID) is 5.5A, meeting the needs of a variety of portable and consumer electronic products. K1717-VB uses shovel technology (Trench) to ensure stability in high-frequency and high-temperature environments, and is widely used in power management, switching power supplies and other low-voltage circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Model**: K1717-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5.5A
- **Technology**: Trench
Domain and module applications:
K1717-VB is widely used in many fields due to its superior electrical characteristics, including:
1. **Portable electronic devices**: K1717-VB is suitable for power management circuits of mobile phones, tablets and other portable devices, which can effectively improve battery efficiency and battery life.
2. **Switching power supply**: In the switching power supply module, K1717-VB can be used as the main switching device to provide efficient power conversion and ensure stable output when the load changes.
3. **LED driver**: This MOSFET is very suitable for LED drive circuits, which can quickly switch and adjust the brightness of LEDs to meet different lighting needs and improve system efficiency.
4. **Motor drive**: K1717-VB can be used to drive small motors, providing reliable current control and starting, ensuring high efficiency of motors under various working conditions.
5. **Low voltage application circuit**: This MOSFET is suitable for various low voltage circuits, such as high frequency switching circuits and signal conditioning circuits, ensuring fast response and low power consumption characteristics, and adapting to the needs of modern electronic products for miniaturization and high performance.
In summary, K1717-VB has become an indispensable key component in modern electronic devices with its high performance and miniaturization characteristics.
Technical support:
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