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K16N60W-VB Product details
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K16N60W-VB Product Introduction
K16N60W-VB is a high-performance single N-channel MOSFET packaged in TO247 with excellent electrical characteristics and thermal management capabilities. The device has a maximum drain-source voltage (VDS) of 650V and can withstand gate-source voltages (VGS) of up to ±30V. Its threshold voltage (Vth) is 3.5V, allowing fast turn-on even at low voltages. The on-resistance (RDS(ON)) of K16N60W-VB is 160mΩ at a gate voltage of 10V, has low conduction losses, and can support a maximum drain current (ID) of up to 20A. Using SJ_Multi-EPI technology, this MOSFET is suitable for applications requiring high voltage and high efficiency.
K16N60W-VB is a high-performance single N-channel MOSFET packaged in TO247 with excellent electrical characteristics and thermal management capabilities. The device has a maximum drain-source voltage (VDS) of 650V and can withstand gate-source voltages (VGS) of up to ±30V. Its threshold voltage (Vth) is 3.5V, allowing fast turn-on even at low voltages. The on-resistance (RDS(ON)) of K16N60W-VB is 160mΩ at a gate voltage of 10V, has low conduction losses, and can support a maximum drain current (ID) of up to 20A. Using SJ_Multi-EPI technology, this MOSFET is suitable for applications requiring high voltage and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
K16N60W-VB can be widely used in various high-voltage power management and switching circuits. In the power supply system of industrial equipment, it can effectively control high voltage and high current, improving the overall efficiency and stability of the system. In power inverters and uninterruptible power supplies (UPS), the high voltage tolerance and low conduction loss of K16N60W-VB make it an ideal choice to help optimize the efficiency of power conversion. In addition, this MOSFET is also suitable for motor drives, welding equipment and other applications that require high-voltage switches to ensure reliable operation of the equipment under high load conditions. Its excellent thermal performance and electrical characteristics make it widely used in modern electrical equipment.
K16N60W-VB can be widely used in various high-voltage power management and switching circuits. In the power supply system of industrial equipment, it can effectively control high voltage and high current, improving the overall efficiency and stability of the system. In power inverters and uninterruptible power supplies (UPS), the high voltage tolerance and low conduction loss of K16N60W-VB make it an ideal choice to help optimize the efficiency of power conversion. In addition, this MOSFET is also suitable for motor drives, welding equipment and other applications that require high-voltage switches to ensure reliable operation of the equipment under high load conditions. Its excellent thermal performance and electrical characteristics make it widely used in modern electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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