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K16J55D-VB Product details
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K16J55D-VB Product Introduction
K16J55D-VB is a high voltage single N-channel MOSFET in TO3P package, designed for high power and high voltage applications. Its maximum drain-source voltage (VDS) can reach 600V, suitable for various high voltage power management and switching applications. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring stable performance under different operating conditions. The threshold voltage (Vth) of K16J55D-VB is 3.5V, which can be turned on quickly at the appropriate gate voltage. Its on-resistance (RDS(ON)) is 380mΩ when VGS is 10V, which can effectively reduce conduction losses and improve energy efficiency. The maximum drain current (ID) is 11A, which is suitable for operation under high current conditions. Using SJ_Multi-EPI technology, K16J55D-VB exhibits excellent thermal stability and reliability in power electronics applications.
K16J55D-VB is a high voltage single N-channel MOSFET in TO3P package, designed for high power and high voltage applications. Its maximum drain-source voltage (VDS) can reach 600V, suitable for various high voltage power management and switching applications. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring stable performance under different operating conditions. The threshold voltage (Vth) of K16J55D-VB is 3.5V, which can be turned on quickly at the appropriate gate voltage. Its on-resistance (RDS(ON)) is 380mΩ when VGS is 10V, which can effectively reduce conduction losses and improve energy efficiency. The maximum drain current (ID) is 11A, which is suitable for operation under high current conditions. Using SJ_Multi-EPI technology, K16J55D-VB exhibits excellent thermal stability and reliability in power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K16J55D-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 380mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: K16J55D-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 380mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
K16J55D-VB has a wide range of application potentials in multiple fields and modules, including:
1. **Power converter**: This MOSFET is well suited for high voltage DC-DC converters, capable of handling input voltages up to 600V, providing efficient power conversion, reducing conduction losses and improving overall system efficiency.
2. **Inverter**: K16J55D-VB can be used in solar inverters and wind inverters as a switching element to achieve power conversion from DC to AC, suitable for renewable energy systems, ensuring efficient and stable power output.
3. **Electric vehicle power management**: In the power management system of electric vehicles, K16J55D-VB can support the charge and discharge management of high-voltage batteries, providing the necessary switching performance for high-power driving and charging applications of electric vehicles.
4. **Industrial power supply application**: This device can be used in various industrial power supply equipment, such as welding machines, laser equipment, etc. It can operate stably under high current and high voltage conditions to ensure the reliability and safety of the equipment.
Through these application examples, K16J55D-VB demonstrates its excellent performance in high-voltage power supply and switching circuits, becoming an indispensable and important component in modern power electronics design.
K16J55D-VB has a wide range of application potentials in multiple fields and modules, including:
1. **Power converter**: This MOSFET is well suited for high voltage DC-DC converters, capable of handling input voltages up to 600V, providing efficient power conversion, reducing conduction losses and improving overall system efficiency.
2. **Inverter**: K16J55D-VB can be used in solar inverters and wind inverters as a switching element to achieve power conversion from DC to AC, suitable for renewable energy systems, ensuring efficient and stable power output.
3. **Electric vehicle power management**: In the power management system of electric vehicles, K16J55D-VB can support the charge and discharge management of high-voltage batteries, providing the necessary switching performance for high-power driving and charging applications of electric vehicles.
4. **Industrial power supply application**: This device can be used in various industrial power supply equipment, such as welding machines, laser equipment, etc. It can operate stably under high current and high voltage conditions to ensure the reliability and safety of the equipment.
Through these application examples, K16J55D-VB demonstrates its excellent performance in high-voltage power supply and switching circuits, becoming an indispensable and important component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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