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K16H60C-VB Product details
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K16H60C-VB Product Introduction
The K16H60C-VB is a high-performance N-Channel MOSFET in a TO3P package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of up to 600V, making it ideal for power management systems that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower drive voltage. At a VGS of 10V, the on-resistance (RDS(ON)) is 280mΩ, and it can carry a drain current (ID) of up to 15A, achieving excellent efficiency and thermal performance.
The K16H60C-VB is a high-performance N-Channel MOSFET in a TO3P package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of up to 600V, making it ideal for power management systems that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower drive voltage. At a VGS of 10V, the on-resistance (RDS(ON)) is 280mΩ, and it can carry a drain current (ID) of up to 15A, achieving excellent efficiency and thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 280mΩ @ VGS = 10V
- **ID**: 15A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 280mΩ @ VGS = 10V
- **ID**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
K16H60C-VB is widely used in many fields and modules, especially in high-voltage power conversion and control systems. Due to its 600V drain-source voltage, it is suitable for switch mode power supplies (SMPS), DC-DC converters and other high-voltage power supply designs, enabling efficient power conversion while reducing energy losses.
In electric vehicles and renewable energy systems (such as photovoltaic inverters), K16H60C-VB can be used as a high-voltage switch for battery management and motor drive, ensuring efficient energy transmission and power control, and improving the overall performance of the system.
In addition, this MOSFET is also suitable for use in industrial equipment and home appliances, such as in motor drives, programmable logic controllers (PLCs) and power adapters to achieve efficient power control and management. Its low on-resistance makes it more stable under high load conditions, meeting the strict requirements of modern high-performance electronic products for energy efficiency.
In summary, the K16H60C-VB is a MOSFET that performs well in high voltage and high performance applications, providing design engineers with flexibility and reliability.
K16H60C-VB is widely used in many fields and modules, especially in high-voltage power conversion and control systems. Due to its 600V drain-source voltage, it is suitable for switch mode power supplies (SMPS), DC-DC converters and other high-voltage power supply designs, enabling efficient power conversion while reducing energy losses.
In electric vehicles and renewable energy systems (such as photovoltaic inverters), K16H60C-VB can be used as a high-voltage switch for battery management and motor drive, ensuring efficient energy transmission and power control, and improving the overall performance of the system.
In addition, this MOSFET is also suitable for use in industrial equipment and home appliances, such as in motor drives, programmable logic controllers (PLCs) and power adapters to achieve efficient power control and management. Its low on-resistance makes it more stable under high load conditions, meeting the strict requirements of modern high-performance electronic products for energy efficiency.
In summary, the K16H60C-VB is a MOSFET that performs well in high voltage and high performance applications, providing design engineers with flexibility and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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