K16G60W-VB Product details
Product introduction:
K16G60W-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches 650V, which is suitable for various power electronic devices that require high voltage resistance. The device has a threshold voltage (Vth) of 3.5V, provides good conduction characteristics, and can operate efficiently at a lower gate voltage. At VGS=10V, the on-resistance (RDS(ON)) is 160mΩ, which helps reduce power loss and improve the energy efficiency of the overall system. The maximum drain current (ID) of K16G60W-VB is 20A, enabling it to meet the needs of high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: K16G60W-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
K16G60W-VB is widely used in multiple industries and modules. Here are some typical application scenarios:
1. **Switching Power Supply (SMPS)**:
- K16G60W-VB can be used as the main switching element in high-frequency switching power supplies. Its high voltage and low on-resistance characteristics enable it to perform well in power conversion, improve conversion efficiency and reduce heat loss.
2. **Motor Control**:
- In motor drive systems, this MOSFET can support currents up to 20A and is suitable for controlling the start-up and operation of DC motors or brushless motors. Its fast switching capability makes the motor more responsive and improves overall drive efficiency.
3. **Inverter**:
- K16G60W-VB can be used in solar inverters and other types of inverters to convert DC to AC, especially in high voltage and high power demand situations, to ensure system reliability and efficiency.
4. **LED Driver**:
- In LED lighting applications, this MOSFET can be used to achieve efficient LED driving, provide stable current and voltage control, and ensure LED brightness consistency and service life.
5. **Battery Management System**:
- K16G60W-VB is suitable for controlling the charging and discharging process in battery management systems, especially in high voltage battery packs. Its high withstand voltage and good conduction performance can improve system safety and efficiency.
In general, K16G60W-VB is an excellent N-channel MOSFET, widely used in high voltage and high current power electronics products, which can meet the needs of modern equipment for high efficiency and reliability.
Technical support:
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