K16A60W-VB Product details
Product introduction:
K16A60W-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage applications, with a maximum drain-source voltage (VDS) of up to 650V. This MOSFET uses SJ_Multi-EPI technology to provide excellent current carrying capacity and low on-resistance characteristics (RDS(ON)=160mΩ@VGS=10V). Its threshold voltage (Vth) is 3.5V, suitable for various power management and switching applications, ensuring high efficiency and stable performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 160mΩ (at VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
Technical support:
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