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K16A55D-VB Product details
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Product Introduction
K16A55D-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power applications. The device has a maximum drain-source voltage (VDS) of up to 550V, can operate stably in a high-voltage environment, and has a maximum drain current (ID) of 18A, ensuring reliable performance under a variety of load conditions. The on-resistance (RDS(ON)) of this MOSFET is 260mΩ at a gate voltage (VGS) of 10V, with good power efficiency and heat dissipation performance. With its planar technology, the K16A55D-VB performs well in switching applications and is suitable for high-frequency power conversion and management.
K16A55D-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power applications. The device has a maximum drain-source voltage (VDS) of up to 550V, can operate stably in a high-voltage environment, and has a maximum drain current (ID) of 18A, ensuring reliable performance under a variety of load conditions. The on-resistance (RDS(ON)) of this MOSFET is 260mΩ at a gate voltage (VGS) of 10V, with good power efficiency and heat dissipation performance. With its planar technology, the K16A55D-VB performs well in switching applications and is suitable for high-frequency power conversion and management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K16A55D-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 550V
- **VGS**: ±30V
- **Vth**: 3V
- **RDS(ON)**: 260mΩ (@VGS=10V)
- **ID**: 18A
- **Technology**: Plannar
- **Model**: K16A55D-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 550V
- **VGS**: ±30V
- **Vth**: 3V
- **RDS(ON)**: 260mΩ (@VGS=10V)
- **ID**: 18A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules: K16A55D-VB is widely used in many fields, especially in high-voltage power supply and power conversion systems. In the charging piles and inverters of electric vehicles, due to its high voltage tolerance, it can effectively improve the safety and reliability of the system. In addition, in industrial automation equipment, K16A55D-VB can be used in motor drive and control circuits to ensure the stability of the equipment under high load conditions. At the same time, in the power management of household appliances such as air conditioners and washing machines, this MOSFET also plays an important role, improving energy efficiency and system performance. In summary, K16A55D-VB is an indispensable component of modern electronic equipment with its excellent performance, providing a solid guarantee for high-efficiency and high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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