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K1698-VB Product details

Product introduction:

K1698-VB Product Introduction

K1698-VB is a high-performance single N-channel MOSFET in SOT89 package, suitable for a variety of power management and switching applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand gate-source voltages (VGS) up to ±20V. The device has a low threshold voltage (Vth) of 1.8V and can turn on quickly under low voltage conditions. The on-resistance (RDS(ON)) of K1698-VB is 125mΩ (@VGS=4.5V) and 102mΩ (@VGS=10V), respectively, and it exhibits excellent performance at a maximum drain current (ID) of 4.2A. This MOSFET is an ideal choice for low-power circuit design with its miniaturization, high efficiency and excellent thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 100V 1.8V 4.2A 102mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 100V 1.8V 4.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 100V 1.8V 4.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
Detailed parameter description

- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ (@VGS=4.5V)
- 102mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 4.2A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

K1698-VB is suitable for a wide range of applications such as power management, switching power supplies, LED drivers and motor control. In mobile devices and consumer electronics, its low on-resistance and miniaturized package make it an ideal choice for high-efficiency power switches. In LED driver circuits, K1698-VB can provide a stable current to ensure uniform brightness of the LED and save energy. In addition, this MOSFET is also suitable for power adapters and DC-DC converters to improve conversion efficiency and reduce heat loss. Its excellent electrical characteristics make it an important part of low-power and high-efficiency designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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