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K1671-VB Product details
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K1671-VB Product Introduction
K1671-VB is a high-performance single N-channel MOSFET in TO3P package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 250V, and it can operate stably in demanding voltage environments. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 3.5V, making it suitable for a variety of power management and switching circuits. The on-resistance (RDS(ON)) of K1671-VB is only 40mΩ at VGS of 10V, which significantly reduces conduction losses and improves system efficiency. Its maximum drain current (ID) can reach 60A, making it an excellent performer in high current applications. Using Trench technology, K1671-VB not only has excellent performance, but also exhibits good thermal stability and reliability, making it an ideal choice in power supply design.
K1671-VB is a high-performance single N-channel MOSFET in TO3P package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 250V, and it can operate stably in demanding voltage environments. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 3.5V, making it suitable for a variety of power management and switching circuits. The on-resistance (RDS(ON)) of K1671-VB is only 40mΩ at VGS of 10V, which significantly reduces conduction losses and improves system efficiency. Its maximum drain current (ID) can reach 60A, making it an excellent performer in high current applications. Using Trench technology, K1671-VB not only has excellent performance, but also exhibits good thermal stability and reliability, making it an ideal choice in power supply design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K1671-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 40mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
- **Model**: K1671-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON)）**:
- 40mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
K1671-VB has a wide range of application potentials in multiple fields and modules, including:
1. **Power management system**: K1671-VB can be used in efficient DC-DC converters, especially in medium and high voltage applications, providing excellent conduction performance, helping to achieve higher conversion efficiency and less heat loss.
2. **Motor control**: In motor drive and control systems, K1671-VB can be used as a switching device that can handle high current demands and maintain stability during frequent switching operations, suitable for industrial equipment and power tools.
3. **Inverters and frequency converters**: This MOSFET performs well in solar inverters and frequency converters, capable of handling input voltages up to 250V, achieving efficient power conversion, suitable for renewable energy systems.
4. **Automotive Electronics**: K1671-VB is suitable for power management and charging systems in electric vehicles. As a switching element, it ensures reliable performance under high current and high voltage conditions, supporting the fast charging needs of intelligent electric vehicles.
Through these application examples, K1671-VB demonstrates its excellent performance in power supply and switching circuits, becoming an indispensable component in modern electronic design.
K1671-VB has a wide range of application potentials in multiple fields and modules, including:
1. **Power management system**: K1671-VB can be used in efficient DC-DC converters, especially in medium and high voltage applications, providing excellent conduction performance, helping to achieve higher conversion efficiency and less heat loss.
2. **Motor control**: In motor drive and control systems, K1671-VB can be used as a switching device that can handle high current demands and maintain stability during frequent switching operations, suitable for industrial equipment and power tools.
3. **Inverters and frequency converters**: This MOSFET performs well in solar inverters and frequency converters, capable of handling input voltages up to 250V, achieving efficient power conversion, suitable for renewable energy systems.
4. **Automotive Electronics**: K1671-VB is suitable for power management and charging systems in electric vehicles. As a switching element, it ensures reliable performance under high current and high voltage conditions, supporting the fast charging needs of intelligent electric vehicles.
Through these application examples, K1671-VB demonstrates its excellent performance in power supply and switching circuits, becoming an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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