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K1657-T2B-A-VB Product details
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Product Introduction
K1657-T2B-A-VB is a small single N-channel MOSFET in SOT23-3 package, designed for low voltage and low power applications. Its maximum drain-source voltage (VDS) is 60V, suitable for use in electronic devices in the low to medium voltage range. K1657-T2B-A-VB utilizes advanced Trench technology, with excellent switching performance and low on-resistance, making it an ideal choice in a variety of portable and consumer electronic products.
K1657-T2B-A-VB is a small single N-channel MOSFET in SOT23-3 package, designed for low voltage and low power applications. Its maximum drain-source voltage (VDS) is 60V, suitable for use in electronic devices in the low to medium voltage range. K1657-T2B-A-VB utilizes advanced Trench technology, with excellent switching performance and low on-resistance, making it an ideal choice in a variety of portable and consumer electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 3100mΩ (at VGS=4.5V)
- 2800mΩ (at VGS=10V)
- **ID**: 0.3A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 3100mΩ (at VGS=4.5V)
- 2800mΩ (at VGS=10V)
- **ID**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications: K1657-T2B-A-VB is widely used in various consumer electronics products and low-power power management modules. In smartphones, tablets and other mobile devices, this MOSFET can be used for power switching, regulating power supply voltage, and achieving efficient power management. In addition, its low on-resistance characteristics make it excellent in LED driving and small motor control, ensuring stable operation of the equipment under low power consumption conditions. Due to its small SOT23 package, K1657-T2B-A-VB is suitable for space-constrained application scenarios, supporting the design of compact and efficient electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
