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K1636S-VB Product details
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Product Introduction
K1636S-VB is a high-efficiency single N-channel MOSFET designed in TO263 package for a variety of high-performance power management applications. With a maximum drain-source voltage (VDS) of 250V, the device is capable of stable operation in a medium voltage environment. Its maximum drain current (ID) is 16A, ensuring reliable performance under a variety of load conditions. At a gate voltage (VGS) of 10V, the K1636S-VB has an on-resistance (RDS(ON)) of 230mΩ, providing excellent power efficiency and thermal management. Incorporating modern Trench technology, this MOSFET has low switching losses and is suitable for high-frequency applications.
K1636S-VB is a high-efficiency single N-channel MOSFET designed in TO263 package for a variety of high-performance power management applications. With a maximum drain-source voltage (VDS) of 250V, the device is capable of stable operation in a medium voltage environment. Its maximum drain current (ID) is 16A, ensuring reliable performance under a variety of load conditions. At a gate voltage (VGS) of 10V, the K1636S-VB has an on-resistance (RDS(ON)) of 230mΩ, providing excellent power efficiency and thermal management. Incorporating modern Trench technology, this MOSFET has low switching losses and is suitable for high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: K1636S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **VDS**: 250V
- **VGS**: ±20V
- **Vth**: 3.5V
- **RDS(ON)**: 230mΩ (@VGS=10V)
- **ID**: 16A
- **Technology**: Trench
- **Model**: K1636S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **VDS**: 250V
- **VGS**: ±20V
- **Vth**: 3.5V
- **RDS(ON)**: 230mΩ (@VGS=10V)
- **ID**: 16A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: K1636S-VB is widely used in many fields, especially in power management and switching power supply modules, and is suitable for use in efficient DC-DC converters and linear power supplies. Due to its high voltage and current carrying capacity, this MOSFET is very suitable for high voltage applications such as electric vehicle charging systems and inverters, which can effectively improve energy efficiency and system reliability. In addition, in household appliances, K1636S-VB is widely used in motor drive and control circuits to ensure stable operation and high efficiency. Combined with its excellent performance characteristics, K1636S-VB is an indispensable component in modern electronic devices, providing reliable support for high-performance and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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