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K1611-VB Product details
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Product Introduction
K1611-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high voltage and reliability. The device has a maximum drain-source voltage (VDS) of 850V, which is suitable for operation in high voltage environments and can effectively cope with power conversion and current control requirements. Its maximum drain current (ID) is 5A, ensuring stability under various load conditions. At a gate voltage (VGS) of 10V, the K1611-VB has an on-resistance (RDS(ON)) of 2200mΩ, which makes this MOSFET perform well in various high-voltage power management and switching applications, providing good energy efficiency and thermal performance.
K1611-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high voltage and reliability. The device has a maximum drain-source voltage (VDS) of 850V, which is suitable for operation in high voltage environments and can effectively cope with power conversion and current control requirements. Its maximum drain current (ID) is 5A, ensuring stability under various load conditions. At a gate voltage (VGS) of 10V, the K1611-VB has an on-resistance (RDS(ON)) of 2200mΩ, which makes this MOSFET perform well in various high-voltage power management and switching applications, providing good energy efficiency and thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K1611-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 850V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (@VGS=10V)
- **ID**: 5A
- **Technology**: Plannar
- **Model**: K1611-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 850V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (@VGS=10V)
- **ID**: 5A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules: K1611-VB is widely used in many fields, especially in power electronics, industrial control and high-voltage power conversion. Its high voltage capability makes it an ideal choice for solar inverters, which can efficiently convert solar energy into electrical energy and stably manage power output. In addition, this MOSFET is also suitable for high-voltage power systems such as electric vehicles and charging stations, effectively improving energy efficiency and system reliability. In home appliances and industrial equipment, K1611-VB is widely used in switching power supplies and motor drive applications to ensure performance and stability under high load conditions. In short, K1611-VB has become an indispensable component in high-voltage applications with its excellent electrical performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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