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K1602-VB Product details

Product introduction:

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K1602-VB is a single N-channel MOSFET designed for high voltage applications in a TO220F package. The MOSFET has a rated VDS of up to 850V and is suitable for electronic devices that require high voltage resistance. Its VGS can withstand an input voltage of ±30V, a threshold voltage (Vth) of 3.5V, a high on-resistance (RDS(ON)) of 2200mΩ (@VGS=10V), and can withstand a maximum leakage current of 5A. K1602-VB is suitable for stable operation under high voltage conditions and is widely used in various industrial and power electronic equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 850V 3.5V 5A 2200mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 850V 3.5V 5A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 850V 3.5V 5A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
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- **Package type**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 850V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 2200mΩ (@VGS=10V)
- **Drain current (ID)**: 5A
- **Technology**: Plannar

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Domain and module applications:

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K1602-VB is widely used in fields that require high voltage resistance and reliable performance, such as power converters, inverters, and high-voltage DC power management systems. Its high voltage capability makes it suitable for industrial automation equipment and power electronics, especially in photovoltaic inverters, electric vehicle chargers, and high-voltage power modules. In addition, K1602-VB is also commonly used in motor drives and high-voltage switchgear to achieve efficient power conversion and control, ensuring stable operation in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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