K15J60U-VB Product details
Product introduction:
K15J60U-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 600V, which can provide stable performance under harsh operating conditions. The maximum gate-source voltage (VGS) of this MOSFET is ±30V and the threshold voltage (Vth) is 3.5V, which is suitable for a variety of power supply and switching circuit applications. Its on-resistance (RDS(ON)) is 190mΩ when VGS is 10V, which can effectively reduce conduction losses. The maximum leakage current (ID) is 20A, which is suitable for circuit designs that require high current drive. K15J60U-VB adopts SJ_Multi-EPI technology to ensure its reliability under high temperature and high voltage, making it an ideal choice for modern high-efficiency power supply designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Model**: K15J60U-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 190mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
K15J60U-VB has a wide range of application prospects, mainly including:
1. **Power converter**: This MOSFET can be used in efficient DC-DC converters, can withstand voltages up to 600V, suitable for power management systems, and improve the energy conversion efficiency of the system.
2. **Industrial power equipment**: In industrial environments, K15J60U-VB can be used as a power switch or regulator to ensure stable operation in high voltage and high current applications, suitable for motor drive and heavy load applications.
3. **Renewable energy system**: The device performs well in solar inverters and wind power generation equipment, can handle high voltage DC power, and help achieve efficient energy conversion.
4. **Electric vehicle charging system**: K15J60U-VB can be used in electric vehicle charging equipment, as a switch controller to provide reliable performance under high voltage and high current conditions, ensuring the safety and efficiency of the charging process.
Through the above parameters and application examples, K15J60U-VB demonstrates its superior characteristics in high-voltage, high-efficiency applications and is a key component in modern power supply and switching circuit design.
Technical support:
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