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K1596-VB Product details

Product introduction:

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K1596-VB is a high-efficiency single N-channel MOSFET in TO220F package, designed for applications requiring high current and low conduction loss. It has a rated VDS of 30V, supports VGS of ±20V, and has an extremely low on-resistance (RDS(ON)), which is 2mΩ at VGS=4.5V and even lower at 1mΩ at VGS=10V. This excellent performance enables K1596-VB to withstand leakage currents up to 68A, making it particularly suitable for high-power switches and power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 30V 1.7V 68A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 30V 1.7V 68A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 30V 1.7V 68A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
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- **Package type**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**: 2mΩ (@VGS=4.5V)
- **RDS(ON)**: 1mΩ (@VGS=10V)
- **Drain current (ID)**: 68A
- **Technology**: Trench

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Domain and module applications:

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K1596-VB is widely used in various high-performance electronic devices and power management modules, especially in power converters, DC-DC converters and motor drivers. Its ultra-low on-resistance and high current capability make it very suitable for switching power supplies and inverter applications that require high efficiency, which can effectively reduce power consumption and improve system performance. In addition, K1596-VB is also commonly used in battery management systems and portable devices to help achieve fast switching and high-efficiency power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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