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K1587-VB Product details
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Product Introduction
K1587-VB is a high-performance N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 30V, suitable for various electronic switching and power management applications. Its maximum drain current (ID) can reach 6.8A, ensuring stability under high load conditions. At gate voltages (VGS) of 2.5V and 4.5V, the on-resistance (RDS(ON)) is 30mΩ and 22mΩ respectively, providing excellent conductivity and low power consumption, making K1587-VB an ideal choice for high-efficiency circuits.
K1587-VB is a high-performance N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 30V, suitable for various electronic switching and power management applications. Its maximum drain current (ID) can reach 6.8A, ensuring stability under high load conditions. At gate voltages (VGS) of 2.5V and 4.5V, the on-resistance (RDS(ON)) is 30mΩ and 22mΩ respectively, providing excellent conductivity and low power consumption, making K1587-VB an ideal choice for high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Model**: K1587-VB
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 30mΩ (@VGS=2.5V)
- **RDS(ON)**: 22mΩ (@VGS=4.5V)
- **ID**: 6.8A
- **Technology**: Trench
- **Model**: K1587-VB
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 30mΩ (@VGS=2.5V)
- **RDS(ON)**: 22mΩ (@VGS=4.5V)
- **ID**: 6.8A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules: K1587-VB is widely used in mobile devices, portable electronics and other small power management systems. Its low on-resistance and high current handling capability make it very suitable for battery-powered devices such as smartphones, tablets and wireless sensor networks. In LED drive applications, this MOSFET can efficiently control the switching and dimming of LEDs to provide stable light output. In addition, in power tools and small motor control, the high frequency response and low power consumption characteristics of K1587-VB make it an ideal choice. Its excellent performance can ensure reliability and efficiency in various electronic applications, and it is an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
