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K1583-VB Product details
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K1583-VB Product Introduction
K1583-VB is a high-efficiency single N-channel MOSFET in a SOT89 package designed for low-voltage applications. Its maximum drain-source voltage (VDS) is 30V, which can handle a variety of low-voltage power and signal conditioning applications. The device has a good gate-source voltage range with a maximum gate-source voltage (VGS) of ±20V, ensuring stable operation under different operating conditions. The threshold voltage (Vth) of K1583-VB is 1.7V, the on-resistance (RDS(ON)) is 30mΩ at VGS of 2.5V, and is lower to 22mΩ at VGS of 4.5V. The maximum drain current (ID) is 6.8A, which is suitable for efficient power management and switch control. Using Trench technology, K1583-VB achieves low conduction loss and high efficiency in small-size devices, which is very suitable for the needs of modern electronic products.
K1583-VB is a high-efficiency single N-channel MOSFET in a SOT89 package designed for low-voltage applications. Its maximum drain-source voltage (VDS) is 30V, which can handle a variety of low-voltage power and signal conditioning applications. The device has a good gate-source voltage range with a maximum gate-source voltage (VGS) of ±20V, ensuring stable operation under different operating conditions. The threshold voltage (Vth) of K1583-VB is 1.7V, the on-resistance (RDS(ON)) is 30mΩ at VGS of 2.5V, and is lower to 22mΩ at VGS of 4.5V. The maximum drain current (ID) is 6.8A, which is suitable for efficient power management and switch control. Using Trench technology, K1583-VB achieves low conduction loss and high efficiency in small-size devices, which is very suitable for the needs of modern electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Model**: K1583-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: K1583-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
K1583-VB has a wide range of application potentials in multiple industries, mainly including:
1. **Power management system**: This MOSFET can be used in efficient DC-DC converters and power switches, capable of providing up to 6.8A of current at low voltage, supporting high-efficiency power management.
2. **Portable devices**: In mobile phones, tablets and other portable electronic devices, K1583-VB can be used as a power switch to optimize power consumption and extend battery life, suitable for applications with strict requirements on size and weight.
3. **LED driver**: K1583-VB can be used in LED lighting control circuits, adjusting the brightness and power of LEDs through efficient switching technology, suitable for various lighting solutions.
4. **Signal conditioning circuit**: Due to its low on-resistance and high current capability, the device can also be used in signal amplification and conditioning circuits to ensure efficient and reliable signal transmission.
Through the above parameters and application examples, K1583-VB demonstrates its superior characteristics in low-voltage and high-performance applications, becoming an important component in modern electronic design.
K1583-VB has a wide range of application potentials in multiple industries, mainly including:
1. **Power management system**: This MOSFET can be used in efficient DC-DC converters and power switches, capable of providing up to 6.8A of current at low voltage, supporting high-efficiency power management.
2. **Portable devices**: In mobile phones, tablets and other portable electronic devices, K1583-VB can be used as a power switch to optimize power consumption and extend battery life, suitable for applications with strict requirements on size and weight.
3. **LED driver**: K1583-VB can be used in LED lighting control circuits, adjusting the brightness and power of LEDs through efficient switching technology, suitable for various lighting solutions.
4. **Signal conditioning circuit**: Due to its low on-resistance and high current capability, the device can also be used in signal amplification and conditioning circuits to ensure efficient and reliable signal transmission.
Through the above parameters and application examples, K1583-VB demonstrates its superior characteristics in low-voltage and high-performance applications, becoming an important component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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