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K1582-T2B-A-VB Product details
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K1582-T2B-A-VB Product Introduction
K1582-T2B-A-VB is a high-performance N-Channel MOSFET in a SOT23-3 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 0.3A. Its threshold voltage (Vth) is 1.7V, which is suitable for high-performance operation in low-voltage applications. K1582-T2B-A-VB uses Trench technology and has a higher on-resistance (RDS(ON)), which is 3100mΩ at VGS of 4.5V and 2800mΩ at VGS of 10V, ensuring good performance in small signal and power switching applications.
K1582-T2B-A-VB is a high-performance N-Channel MOSFET in a SOT23-3 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 0.3A. Its threshold voltage (Vth) is 1.7V, which is suitable for high-performance operation in low-voltage applications. K1582-T2B-A-VB uses Trench technology and has a higher on-resistance (RDS(ON)), which is 3100mΩ at VGS of 4.5V and 2800mΩ at VGS of 10V, ensuring good performance in small signal and power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID**: 0.3A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and modules: K1582-T2B-A-VB excels in multiple low-power electronic applications, especially in portable devices and small power management modules. It can be used for power switches in mobile phones, tablets, and other mobile devices to ensure efficient energy transmission. In addition, this MOSFET can also be used in LED drive circuits and small motor drivers for effective control and regulation. In home appliances and consumer electronics, K1582-T2B-A-VB is also widely used in power adapters and chargers to provide users with stable power output and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
