Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
K1581-T1B-A-VB Detailed parameter description
- **Model**: K1581-T1B-A-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100 mΩ @ VGS = 4.5V
- 2800 mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
As an efficient N-channel MOSFET, K1581-T1B-A-VB is suitable for multiple fields and modules, including:
1. **Power Management**: In DC-DC converters, K1581-T1B-A-VB can be used as a switching element to help improve conversion efficiency and reduce power consumption.
2. **Motor Drive**: This MOSFET can be used in motor control circuits to provide efficient switching operations, support miniaturization and high-frequency control.
3. **LED Drive**: In LED lighting systems, K1581-T1B-A-VB can effectively regulate current to achieve brightness control and energy saving.
4. **Signal Amplification**: In audio amplifiers and other signal processing modules, this device can be used to improve the signal driving capability to ensure high-fidelity sound quality.
5. **Consumer Electronics**: This MOSFET is suitable for use in a variety of consumer electronics products, such as power management and switch control in portable devices to improve overall performance and reliability.
Through these application examples, the K1581-T1B-A-VB shows its wide applicability and importance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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