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K1579-VB Product details

Product introduction:

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K1579-VB is a low voltage single N-channel MOSFET in SOT89 package, designed for high efficiency and low power consumption applications. It has a rated VDS of 30V, supports VGS of ±20V, and has a very low RDS(ON) value (30mΩ at VGS=2.5V, 22mΩ at VGS=4.5V), making it an excellent performer in switching applications. With its high leakage current capability of up to 6.8A, K1579-VB is ideal for use in circuits requiring high efficiency and fast switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 30V 1.7V 6.8A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
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- **Package type**: SOT89
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**: 30mΩ (@VGS=2.5V)
- **RDS(ON)**: 22mΩ (@VGS=4.5V)
- **Drain current (ID)**: 6.8A
- **Technology**: Trench

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Domain and module applications:

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K1579-VB is widely used in consumer electronics, portable devices and power management modules. Its low on-resistance and high current handling capability make it particularly suitable for use in battery-powered devices such as smartphones, tablets and wireless devices to improve power efficiency and extend battery life. In addition, K1579-VB can also be used in DC-DC converters and load switch circuits to help achieve higher energy conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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