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K1548-VB Product details
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Product Introduction
K1548-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 950V, suitable for various power management and switching circuits. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON) of 2400mΩ@VGS=10V), providing stable performance in current management and suitable for medium current application requirements.
K1548-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 950V, suitable for various power management and switching circuits. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON) of 2400mΩ@VGS=10V), providing stable performance in current management and suitable for medium current application requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ@VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ@VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
K1548-VB is widely used in high-voltage power converters, switching power supplies, and motor drives. Its high drain-source voltage of 950V makes it an ideal choice for high-voltage inverters in industrial equipment and power systems. Specifically, in power management systems, it can be used in uninterruptible power supplies (UPS) and battery chargers to effectively provide efficient current control and voltage regulation.
In addition, in renewable energy applications, K1548-VB is also suitable for solar inverters and wind power generation systems to ensure stable operation in high-voltage environments. In addition, this MOSFET can also play an important role in some high-voltage lighting and electrical control systems, providing reliable switching performance and energy conversion efficiency.
K1548-VB is widely used in high-voltage power converters, switching power supplies, and motor drives. Its high drain-source voltage of 950V makes it an ideal choice for high-voltage inverters in industrial equipment and power systems. Specifically, in power management systems, it can be used in uninterruptible power supplies (UPS) and battery chargers to effectively provide efficient current control and voltage regulation.
In addition, in renewable energy applications, K1548-VB is also suitable for solar inverters and wind power generation systems to ensure stable operation in high-voltage environments. In addition, this MOSFET can also play an important role in some high-voltage lighting and electrical control systems, providing reliable switching performance and energy conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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