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K1544-VB Product details
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Product Introduction
K1544-VB is a high-efficiency N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 600V, suitable for power management and switching applications that require high voltage operation. Its leakage current (ID) can reach 20A, and its on-resistance (RDS(ON)) is 190mΩ at a gate voltage (VGS) of 10V, ensuring low power consumption and excellent thermal performance under high frequency and high power conditions. K1544-VB is able to meet the stringent requirements of modern electronic devices in terms of efficiency and reliability.
K1544-VB is a high-efficiency N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 600V, suitable for power management and switching applications that require high voltage operation. Its leakage current (ID) can reach 20A, and its on-resistance (RDS(ON)) is 190mΩ at a gate voltage (VGS) of 10V, ensuring low power consumption and excellent thermal performance under high frequency and high power conditions. K1544-VB is able to meet the stringent requirements of modern electronic devices in terms of efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K1544-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 190mΩ (@VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: K1544-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 190mΩ (@VGS=10V)
- **ID**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules: K1544-VB is widely used in high-voltage power management and switching systems, and is particularly suitable for power adapters, high-efficiency switching power supplies (SMPS) and converters. In electric vehicles and hybrid vehicles, this MOSFET is used in battery management and motor control systems, and can provide reliable performance in high-voltage environments. In addition, K1544-VB is also used in industrial automation equipment, inverters and renewable energy systems such as solar and wind energy conversion to ensure safety and stability under various harsh conditions. Its excellent electrical characteristics make it one of the indispensable key components in modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
