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K1430-VB Product details
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Product Introduction
K1430-VB is a high-performance N-channel MOSFET in TO220F package, designed for medium voltage applications. Its drain-source voltage (VDS) is 100V and the gate-source voltage (VGS) range reaches ±20V, which is suitable for a variety of power management and switching applications. The device has a threshold voltage (Vth) of 1.8V and a relatively low on-resistance (RDS(ON) is 86mΩ@VGS=10V), ensuring its excellent conductivity at high currents.
K1430-VB is a high-performance N-channel MOSFET in TO220F package, designed for medium voltage applications. Its drain-source voltage (VDS) is 100V and the gate-source voltage (VGS) range reaches ±20V, which is suitable for a variety of power management and switching applications. The device has a threshold voltage (Vth) of 1.8V and a relatively low on-resistance (RDS(ON) is 86mΩ@VGS=10V), ensuring its excellent conductivity at high currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ@VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ@VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and modules: K1430-VB is widely used in medium voltage fields such as switching power supplies, DC-DC converters and motor control. Its high current carrying capacity makes it very suitable for applications in industrial equipment, home appliances and automotive electronics. In addition, this MOSFET performs well in power management systems and LED driver modules, providing stable and efficient current control, improving the reliability and performance of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
