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K13H90A1-VB Product details
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K13H90A1-VB Product Introduction
K13H90A1-VB is a high-performance N-Channel MOSFET packaged in TO3P with a drain-source voltage (VDS) of 900V and a maximum drain current (ID) of 9A. Its threshold voltage (Vth) is 3.5V, ensuring stable and reliable operation in high-voltage applications. Using SJ_Multi-EPI technology, K13H90A1-VB has a low on-resistance (RDS(ON)) of 750mΩ, which makes it perform well under high voltage and high current conditions.
K13H90A1-VB is a high-performance N-Channel MOSFET packaged in TO3P with a drain-source voltage (VDS) of 900V and a maximum drain current (ID) of 9A. Its threshold voltage (Vth) is 3.5V, ensuring stable and reliable operation in high-voltage applications. Using SJ_Multi-EPI technology, K13H90A1-VB has a low on-resistance (RDS(ON)) of 750mΩ, which makes it perform well under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 900V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 750mΩ @ VGS = 10V
- **ID**: 9A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 900V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 750mΩ @ VGS = 10V
- **ID**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules: K13H90A1-VB is widely used in high-voltage power converters, inverters, and electric vehicle drive systems. In these applications, its high voltage and low on-resistance characteristics ensure efficient energy conversion and management, and are particularly suitable for high-load environments such as solar inverters and industrial power supplies. In addition, it is also suitable for high-voltage switches and power amplifiers, ensuring stable operation of the system under harsh conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
