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K13A60DR-VB Product details
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K13A60DR-VB Product Introduction
K13A60DR-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage applications. Its rated drain-source voltage (VDS) is up to 650V, making it suitable for use in high-voltage environments. The device has a low on-resistance (RDS(ON) of 320mΩ@VGS=10V), which can effectively reduce energy loss and improve system efficiency. The K13A60DR-VB supports a maximum drain current (ID) of 20A, making it an excellent performer in a variety of power electronics applications, especially where high voltage and high current are required.
K13A60DR-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage applications. Its rated drain-source voltage (VDS) is up to 650V, making it suitable for use in high-voltage environments. The device has a low on-resistance (RDS(ON) of 320mΩ@VGS=10V), which can effectively reduce energy loss and improve system efficiency. The K13A60DR-VB supports a maximum drain current (ID) of 20A, making it an excellent performer in a variety of power electronics applications, especially where high voltage and high current are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
K13A60DR-VB Detailed parameter description
- **Model**: K13A60DR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: Plannar
- **Model**: K13A60DR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
K13A60DR-VB has a wide range of applications in multiple fields and modules. Here are a few typical examples:
1. **Switching power supply**: Due to its high rated drain-source voltage and low on-resistance, K13A60DR-VB can be widely used in switching power supplies (SMPS) to improve conversion efficiency and reduce heat generation, and is suitable for power conversion systems.
2. **Inverter**: In solar inverters and other types of inverters, this device is able to handle high voltage and high current requirements to ensure stable energy conversion and output.
3. **Motor drive**: K13A60DR-VB is suitable for motor drive circuits and can withstand high currents to ensure that the motor runs in high-efficiency mode and improve overall drive performance.
4. **High-voltage power module**: In high-voltage power modules, this MOSFET can be used as a switching component to support high voltage and high current applications to meet the needs of various industrial and commercial uses.
These applications demonstrate the importance of K13A60DR-VB in modern electronic devices, especially in situations where high voltage and high efficiency are required.
K13A60DR-VB has a wide range of applications in multiple fields and modules. Here are a few typical examples:
1. **Switching power supply**: Due to its high rated drain-source voltage and low on-resistance, K13A60DR-VB can be widely used in switching power supplies (SMPS) to improve conversion efficiency and reduce heat generation, and is suitable for power conversion systems.
2. **Inverter**: In solar inverters and other types of inverters, this device is able to handle high voltage and high current requirements to ensure stable energy conversion and output.
3. **Motor drive**: K13A60DR-VB is suitable for motor drive circuits and can withstand high currents to ensure that the motor runs in high-efficiency mode and improve overall drive performance.
4. **High-voltage power module**: In high-voltage power modules, this MOSFET can be used as a switching component to support high voltage and high current applications to meet the needs of various industrial and commercial uses.
These applications demonstrate the importance of K13A60DR-VB in modern electronic devices, especially in situations where high voltage and high efficiency are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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