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K1399-T2B-A-VB Product details

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Product introduction：

K1399-T2B-A-VB Product Introduction
K1399-T2B-A-VB is a small N-Channel MOSFET in SOT23-3 package with 60V drain-source voltage (VDS) and 0.3A maximum drain current (ID). Its threshold voltage (Vth) is 1.7V, ensuring that it can work reliably even under low voltage drive. Using Trench technology, the on-resistance (RDS(ON)) of K1399-T2B-A-VB is 3100mΩ (at VGS = 4.5V) and 2800mΩ (at VGS = 10V), making it very suitable for low-power applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20（±V） 1.7V 0.3A 2800mΩ
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 3100mΩ @ VGS = 4.5V
- **RDS(ON)**: 2800mΩ @ VGS = 10V
- **ID**: 0.3A
- **Technology**: Trench

Domain and module applications：

Applications and modules: K1399-T2B-A-VB is suitable for applications such as portable electronic devices, LED driver circuits and small switching power supplies. In these fields, its low power consumption characteristics can effectively improve system efficiency, especially in situations where low voltage drive is required. In addition, it is also commonly used in battery management systems and signal amplifiers to provide reliable switching functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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