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K1341-VB Product details
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Product Introduction
K1341-VB is a high voltage N-channel MOSFET in TO3P package with 900V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) range. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON) is 750mΩ@VGS=10V), which makes it have good conductivity in high voltage applications and suitable for a variety of industrial and consumer electronic applications.
K1341-VB is a high voltage N-channel MOSFET in TO3P package with 900V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) range. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON) is 750mΩ@VGS=10V), which makes it have good conductivity in high voltage applications and suitable for a variety of industrial and consumer electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules: K1341-VB is widely used in high voltage power management, motor drive and power inverter. Its high withstand voltage characteristics make it very suitable for power conversion modules in industrial equipment and power tools, as well as inverter applications in renewable energy systems, providing efficient and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
