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K1315L-VB Product details

Product introduction:

Product Introduction
K1315L-VB is a high voltage N-channel MOSFET in TO251 package with 650V drain-source voltage (VDS) and 30V gate-source voltage (VGS) range. Its threshold voltage (Vth) is 3.5V and has excellent on-resistance (RDS(ON) is 500mΩ@VGS=10V), which is suitable for high-efficiency power conversion and drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: K1315L-VB can be widely used in high voltage power converters, DC-DC converters and motor drive modules. Due to its high voltage characteristics, it is suitable for use in industrial automation, automotive electronics and renewable energy systems (such as solar inverters), providing high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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