中文
English
K1314L-VB Product details
Back to previous pageProduct introduction：
Product Introduction - K1314L-VB MOSFET
K1314L-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 650V, and the drain current (ID) can withstand 5A, which is suitable for use in high-voltage power supplies and switching circuits. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 950mΩ@VGS=10V. It uses SJ_Multi-EPI technology to ensure excellent conduction characteristics and thermal performance. The K1314L-VB is suitable for a variety of industrial and consumer electronic devices, and can provide stable and reliable performance in applications requiring high voltage and good thermal management.
K1314L-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 650V, and the drain current (ID) can withstand 5A, which is suitable for use in high-voltage power supplies and switching circuits. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 950mΩ@VGS=10V. It uses SJ_Multi-EPI technology to ensure excellent conduction characteristics and thermal performance. The K1314L-VB is suitable for a variety of industrial and consumer electronic devices, and can provide stable and reliable performance in applications requiring high voltage and good thermal management.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter Description
1. **Package Type**: TO251
- **Package Description**: TO251 package provides good heat dissipation and convenient circuit layout, suitable for high power density applications.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET has excellent current carrying capacity and is suitable for use in various power control and switching applications.
3. **Drain-Source Voltage (VDS)**: 650V
- **Description**: The maximum drain-source voltage is 650V, enabling it to operate normally in a high voltage environment and is suitable for power electronic equipment.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The gate-source voltage of ±30V provides flexible drive options and is compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The moderate threshold voltage enables the device to turn on at a lower gate voltage, improving the circuit response speed.
6. **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Description**: The lower on-resistance reduces conduction losses and improves energy efficiency, making K1314L-VB perform well in the power conversion process.
7. **Drain current (ID)**: 5A
- **Description**: The 5A drain current capability makes it suitable for medium-power applications and can meet a variety of power supply requirements.
8. **Technology type**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides excellent electrical performance and thermal management capabilities, suitable for high-voltage application scenarios.
1. **Package Type**: TO251
- **Package Description**: TO251 package provides good heat dissipation and convenient circuit layout, suitable for high power density applications.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET has excellent current carrying capacity and is suitable for use in various power control and switching applications.
3. **Drain-Source Voltage (VDS)**: 650V
- **Description**: The maximum drain-source voltage is 650V, enabling it to operate normally in a high voltage environment and is suitable for power electronic equipment.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The gate-source voltage of ±30V provides flexible drive options and is compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The moderate threshold voltage enables the device to turn on at a lower gate voltage, improving the circuit response speed.
6. **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Description**: The lower on-resistance reduces conduction losses and improves energy efficiency, making K1314L-VB perform well in the power conversion process.
7. **Drain current (ID)**: 5A
- **Description**: The 5A drain current capability makes it suitable for medium-power applications and can meet a variety of power supply requirements.
8. **Technology type**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides excellent electrical performance and thermal management capabilities, suitable for high-voltage application scenarios.
Domain and module applications：
Applications and modules
1. **High-voltage power conversion**:
K1314L-VB is widely used in high-voltage power converters. It can work stably under a high-voltage environment of 650V and is suitable for various power management systems.
2. **Motor drive and control**:
In motor drive applications, this MOSFET can be used as a switching device to control the start and stop and speed regulation of the motor. It is widely used in industrial automation equipment and household appliances.
3. **LED driver power**:
K1314L-VB is suitable for LED lighting driver power. It can effectively control the operating current of the LED and provide stable light output. It is used in commercial and home lighting.
4. **Inverter**:
This device can be used in inverter circuits to convert DC power into AC power. It is suitable for solar inverters, UPS systems and other renewable energy applications.
5. **Automotive Electronic Systems**:
In automotive electronic equipment, K1314L-VB can be used for power management and switch control to ensure reliable operation in high-voltage environments, and is used in the power systems of electric and hybrid vehicles.
Through the above product introduction, detailed parameter description and application examples, K1314L-VB demonstrates its superior performance and wide applicability in high-voltage power management.
1. **High-voltage power conversion**:
K1314L-VB is widely used in high-voltage power converters. It can work stably under a high-voltage environment of 650V and is suitable for various power management systems.
2. **Motor drive and control**:
In motor drive applications, this MOSFET can be used as a switching device to control the start and stop and speed regulation of the motor. It is widely used in industrial automation equipment and household appliances.
3. **LED driver power**:
K1314L-VB is suitable for LED lighting driver power. It can effectively control the operating current of the LED and provide stable light output. It is used in commercial and home lighting.
4. **Inverter**:
This device can be used in inverter circuits to convert DC power into AC power. It is suitable for solar inverters, UPS systems and other renewable energy applications.
5. **Automotive Electronic Systems**:
In automotive electronic equipment, K1314L-VB can be used for power management and switch control to ensure reliable operation in high-voltage environments, and is used in the power systems of electric and hybrid vehicles.
Through the above product introduction, detailed parameter description and application examples, K1314L-VB demonstrates its superior performance and wide applicability in high-voltage power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
