Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
|
127mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Parameter Description
1. **Package Type**: TO220
- **Package Description**: The TO220 package provides good heat dissipation for this MOSFET, suitable for stable operation in high power and high temperature environments.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET has excellent conduction characteristics and is suitable for power conversion and control applications.
3. **Drain-Source Voltage (VDS)**: 100V
- **Description**: The maximum drain-source voltage is 100V, making it suitable for medium voltage applications and can meet a variety of power supply design requirements.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The gate-source voltage of ±20V provides flexible drive options to adapt to different drive circuits.
5. **Threshold voltage (Vth)**: 1.8V
- **Description**: A moderate threshold voltage helps the device start up under low voltage conditions and improves the response speed of the circuit.
6. **On-resistance (RDS(ON))**: 127mΩ@VGS=10V
- **Description**: Low on-resistance ensures low energy loss under high current conditions and improves circuit efficiency.
7. **Drain current (ID)**: 18A
- **Description**: The 18A drain current capability enables this MOSFET to withstand large currents and is suitable for a variety of power applications.
8. **Technology type**: Trench
- **Description**: Trench process technology provides lower conduction losses and higher efficiency, suitable for power management systems that require high performance.
Domain and module applications：
Application fields and modules
1. **Switching Power Supply (SMPS)**:
K1300-VB is widely used in switching power supply modules, which can efficiently convert electrical energy and reduce energy loss. It is suitable for power management of computer power supplies, TVs and other consumer electronic products.
2. **Motor drive**:
In the field of motor control, this MOSFET can be used as a switching device to control the start and stop and speed of the motor. It is widely used in motor control modules in industrial automation equipment and household appliances.
3. **LED lighting drive**:
K1300-VB is suitable for LED drive circuits, can effectively control the current of LEDs, and provide stable light output. It is often used in LED lamps and lighting systems.
4. **Power management**:
This MOSFET can be used in various power management circuits to provide reliable power switching functions. It is used in mobile phone chargers, tablets and other mobile devices.
5. **Automotive Electronics**:
In automotive electronic systems, K1300-VB can be used in applications such as power conversion and motor control, providing efficient power management solutions to ensure the reliability and performance of vehicle electronic equipment.
Through the above product introduction, detailed parameter description and application examples, K1300-VB demonstrates its excellent performance and wide applicability in a variety of high-performance power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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