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K12J60U-VB Product details
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K12J60U-VB MOSFET Product Introduction
**K12J60U-VB** is a high voltage N-type MOSFET in TO3P package, designed for high voltage power supply and switching applications. With a maximum drain-source voltage (VDS) of 600V, the device is capable of handling power conversion at high voltage. Its on-resistance (RDS(ON)) is 380mΩ@VGS=10V, ensuring low loss and high efficiency at high current. The current rating of this device is 11A, suitable for applications that require high current handling. Using SJ_Multi-EPI technology, it provides excellent performance and thermal stability, making it suitable for power management needs of various industrial and consumer products.
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**K12J60U-VB** is a high voltage N-type MOSFET in TO3P package, designed for high voltage power supply and switching applications. With a maximum drain-source voltage (VDS) of 600V, the device is capable of handling power conversion at high voltage. Its on-resistance (RDS(ON)) is 380mΩ@VGS=10V, ensuring low loss and high efficiency at high current. The current rating of this device is 11A, suitable for applications that require high current handling. Using SJ_Multi-EPI technology, it provides excellent performance and thermal stability, making it suitable for power management needs of various industrial and consumer products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
1. **Package**: TO3P
- TO3P package provides good heat dissipation performance, suitable for high power applications, and helps maintain the stability and reliability of the device.
2. **Configuration**: Single N-type channel
- Single channel configuration simplifies circuit design and is suitable for a variety of power conversion and control schemes.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-source voltage is 600V, ensuring the ability to handle power conversion and control under high voltage conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The wide gate-source voltage range (±30V) enhances operational flexibility and can adapt to different drive circuit design requirements.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage of 3.5V provides stable switching characteristics, which helps the device turn on quickly at a specific voltage.
6. **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
- Lower on-resistance reduces power loss and helps improve overall system efficiency.
7. **Current Rating (ID)**: 11A
- The maximum continuous current is 11A, which is suitable for high current loads and can meet the high power requirements in industry and power management.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it improves high voltage resistance and thermal stability, suitable for high voltage applications.
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1. **Package**: TO3P
- TO3P package provides good heat dissipation performance, suitable for high power applications, and helps maintain the stability and reliability of the device.
2. **Configuration**: Single N-type channel
- Single channel configuration simplifies circuit design and is suitable for a variety of power conversion and control schemes.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-source voltage is 600V, ensuring the ability to handle power conversion and control under high voltage conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The wide gate-source voltage range (±30V) enhances operational flexibility and can adapt to different drive circuit design requirements.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage of 3.5V provides stable switching characteristics, which helps the device turn on quickly at a specific voltage.
6. **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
- Lower on-resistance reduces power loss and helps improve overall system efficiency.
7. **Current Rating (ID)**: 11A
- The maximum continuous current is 11A, which is suitable for high current loads and can meet the high power requirements in industry and power management.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it improves high voltage resistance and thermal stability, suitable for high voltage applications.
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Domain and module applications：
Application Examples
1. **Power Converters**:
The K12J60U-VB is ideal for use in high voltage switch mode power supplies (SMPS), which require efficient conversion of electrical energy at high voltages. Its 600V VDS enables it to withstand higher input voltages while maintaining low conduction losses, improving overall system efficiency.
2. **Industrial Drives**:
In motor drive applications, the device can be used to control high voltage motors, provide stable current and efficient power management, and ensure that the motors can operate efficiently.
3. **Electric Vehicle Chargers**:
The K12J60U-VB can be used in high voltage converters for electric vehicle chargers, safely and effectively handling high currents while ensuring high efficiency and stability during the charging process.
4. **Lighting Equipment**:
In high power LED drive circuits, this MOSFET can be used to control current, ensuring that LED lighting systems can operate efficiently and stably to meet various lighting needs.
5. **Solar Inverter**:
In solar inverter, K12J60U-VB can handle high voltage and high power conversion requirements, ensuring stable output during the conversion process from DC to AC.
Overall, **K12J60U-VB** is a high-performance, high-reliability high-voltage MOSFET suitable for a variety of power management and industrial applications. With its excellent electrical characteristics and strong power handling capabilities, K12J60U-VB provides an ideal solution for designs that require high voltage and high current.
1. **Power Converters**:
The K12J60U-VB is ideal for use in high voltage switch mode power supplies (SMPS), which require efficient conversion of electrical energy at high voltages. Its 600V VDS enables it to withstand higher input voltages while maintaining low conduction losses, improving overall system efficiency.
2. **Industrial Drives**:
In motor drive applications, the device can be used to control high voltage motors, provide stable current and efficient power management, and ensure that the motors can operate efficiently.
3. **Electric Vehicle Chargers**:
The K12J60U-VB can be used in high voltage converters for electric vehicle chargers, safely and effectively handling high currents while ensuring high efficiency and stability during the charging process.
4. **Lighting Equipment**:
In high power LED drive circuits, this MOSFET can be used to control current, ensuring that LED lighting systems can operate efficiently and stably to meet various lighting needs.
5. **Solar Inverter**:
In solar inverter, K12J60U-VB can handle high voltage and high power conversion requirements, ensuring stable output during the conversion process from DC to AC.
Overall, **K12J60U-VB** is a high-performance, high-reliability high-voltage MOSFET suitable for a variety of power management and industrial applications. With its excellent electrical characteristics and strong power handling capabilities, K12J60U-VB provides an ideal solution for designs that require high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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