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K12J55D-VB Product details
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Product Introduction
K12J55D-VB is a high-performance single N-channel MOSFET designed with a TO3P package, a high drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. The device has an on-resistance (RDS(ON)) of 380mΩ at a gate voltage of 10V and a maximum drain current (ID) of up to 11A, making it suitable for high-voltage and high-power applications. K12J55D-VB uses SJ_Multi-EPI technology, which has low conduction losses and good thermal stability, enabling it to perform well in a variety of power management and conversion applications.
K12J55D-VB is a high-performance single N-channel MOSFET designed with a TO3P package, a high drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. The device has an on-resistance (RDS(ON)) of 380mΩ at a gate voltage of 10V and a maximum drain current (ID) of up to 11A, making it suitable for high-voltage and high-power applications. K12J55D-VB uses SJ_Multi-EPI technology, which has low conduction losses and good thermal stability, enabling it to perform well in a variety of power management and conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Product model**: K12J55D-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI
- **Product model**: K12J55D-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage capability and stable performance of the K12J55D-VB MOSFET make it suitable for a variety of industries and applications, as follows:
1. **High-voltage switching power supply**: This MOSFET is commonly used in the main power switch of high-voltage switching power supplies, supporting voltages up to 600V, ensuring efficient power conversion and transmission to meet the needs of industrial and commercial power supplies.
2. **Motor control**: In motor drive applications, the K12J55D-VB can be used in the inverter module of the motor to provide reliable current control, suitable for fans, pumps and various industrial motors.
3. **Photovoltaic inverter**: Suitable for inverters used in photovoltaic power generation systems, the K12J55D-VB can effectively convert DC power to AC power for home or industrial use, improving the overall efficiency of the photovoltaic system.
4. **Power Management Circuit**: In the power management module, K12J55D-VB can be used as a high-voltage switch to ensure stable operation of the circuit under high load and reduce energy loss.
These application areas demonstrate the high efficiency and reliability of K12J55D-VB, making it an ideal choice for high-voltage and high-power electronic devices.
The high voltage capability and stable performance of the K12J55D-VB MOSFET make it suitable for a variety of industries and applications, as follows:
1. **High-voltage switching power supply**: This MOSFET is commonly used in the main power switch of high-voltage switching power supplies, supporting voltages up to 600V, ensuring efficient power conversion and transmission to meet the needs of industrial and commercial power supplies.
2. **Motor control**: In motor drive applications, the K12J55D-VB can be used in the inverter module of the motor to provide reliable current control, suitable for fans, pumps and various industrial motors.
3. **Photovoltaic inverter**: Suitable for inverters used in photovoltaic power generation systems, the K12J55D-VB can effectively convert DC power to AC power for home or industrial use, improving the overall efficiency of the photovoltaic system.
4. **Power Management Circuit**: In the power management module, K12J55D-VB can be used as a high-voltage switch to ensure stable operation of the circuit under high load and reduce energy loss.
These application areas demonstrate the high efficiency and reliability of K12J55D-VB, making it an ideal choice for high-voltage and high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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