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K12A60U-VB Product details
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Product Introduction - K12A60U-VB MOSFET
The K12A60U-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 650V and a drain current (ID) of up to 20A, making it an excellent performer in high voltage conversion and power control applications. The K12A60U-VB has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 320mΩ@VGS=10V. It uses Plannar process technology to ensure low conduction losses and good thermal stability, making it suitable for power management and motor control applications in a variety of industrial and household appliances.
The K12A60U-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 650V and a drain current (ID) of up to 20A, making it an excellent performer in high voltage conversion and power control applications. The K12A60U-VB has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 320mΩ@VGS=10V. It uses Plannar process technology to ensure low conduction losses and good thermal stability, making it suitable for power management and motor control applications in a variety of industrial and household appliances.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
- **Package Description**: The TO220F package design has good heat dissipation performance, suitable for high-power applications, and ensures stable operation of the device in high-temperature environments.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET has efficient conduction characteristics in switching and power control applications and is often used in high-voltage circuits.
3. **Drain-Source Voltage (VDS)**: 650V
- **Description**: The high drain-source voltage of 650V makes it suitable for power conversion and control in high-voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The gate-source voltage of ±30V provides a wide driving voltage range and supports a variety of application scenarios.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The higher threshold voltage improves its stability in high-voltage power management applications.
6. **On-resistance (RDS(ON))**:
- **320mΩ@VGS=10V**
- **Description**: Low on-resistance ensures low power operation under high current conditions, improving circuit efficiency.
7. **Drain current (ID)**: 20A
- **Description**: The 20A drain current capability enables the device to withstand larger currents and is suitable for applications requiring high power control.
8. **Technology type**: Plannar
- **Description**: The Plannar process technology enables the device to have stable performance and is suitable for circuits requiring high reliability and durability.
1. **Package Type**: TO220F
- **Package Description**: The TO220F package design has good heat dissipation performance, suitable for high-power applications, and ensures stable operation of the device in high-temperature environments.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET has efficient conduction characteristics in switching and power control applications and is often used in high-voltage circuits.
3. **Drain-Source Voltage (VDS)**: 650V
- **Description**: The high drain-source voltage of 650V makes it suitable for power conversion and control in high-voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The gate-source voltage of ±30V provides a wide driving voltage range and supports a variety of application scenarios.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The higher threshold voltage improves its stability in high-voltage power management applications.
6. **On-resistance (RDS(ON))**:
- **320mΩ@VGS=10V**
- **Description**: Low on-resistance ensures low power operation under high current conditions, improving circuit efficiency.
7. **Drain current (ID)**: 20A
- **Description**: The 20A drain current capability enables the device to withstand larger currents and is suitable for applications requiring high power control.
8. **Technology type**: Plannar
- **Description**: The Plannar process technology enables the device to have stable performance and is suitable for circuits requiring high reliability and durability.
Domain and module applications：
Applications and modules
1. **Photovoltaic inverter**:
K12A60U-VB MOSFET can be used as an efficient switching device in photovoltaic inverters. Its high withstand voltage of 650V ensures the reliability and efficiency of voltage regulation in photovoltaic power generation systems.
2. **Switching power supply (SMPS)**:
In switching power supplies, this device can be used in voltage conversion modules to ensure that the system efficiently converts electrical energy under high voltage conditions and reduces energy loss, which is suitable for industrial power supplies and server power supplies.
3. **Electric vehicle charger**:
K12A60U-VB is widely used in electric vehicle charging systems. As a power switching element, it can ensure efficient charging control while improving the reliability and life of the overall system.
4. **Motor control**:
This MOSFET can provide fast switching response and good thermal stability in motor control modules, which is suitable for high-power motor drive applications, such as motor control in industrial automation equipment and household appliances.
5. **LED lighting drive circuit**:
In high-efficiency LED lighting systems, K12A60U-VB can be used as a driving switch device to ensure stable driving of LED lamps under high voltage conditions, reduce energy loss and extend LED service life.
Through the above product introduction, parameter description and application examples, K12A60U-VB demonstrates its excellent performance and wide applicability in high voltage and high current scenarios.
1. **Photovoltaic inverter**:
K12A60U-VB MOSFET can be used as an efficient switching device in photovoltaic inverters. Its high withstand voltage of 650V ensures the reliability and efficiency of voltage regulation in photovoltaic power generation systems.
2. **Switching power supply (SMPS)**:
In switching power supplies, this device can be used in voltage conversion modules to ensure that the system efficiently converts electrical energy under high voltage conditions and reduces energy loss, which is suitable for industrial power supplies and server power supplies.
3. **Electric vehicle charger**:
K12A60U-VB is widely used in electric vehicle charging systems. As a power switching element, it can ensure efficient charging control while improving the reliability and life of the overall system.
4. **Motor control**:
This MOSFET can provide fast switching response and good thermal stability in motor control modules, which is suitable for high-power motor drive applications, such as motor control in industrial automation equipment and household appliances.
5. **LED lighting drive circuit**:
In high-efficiency LED lighting systems, K12A60U-VB can be used as a driving switch device to ensure stable driving of LED lamps under high voltage conditions, reduce energy loss and extend LED service life.
Through the above product introduction, parameter description and application examples, K12A60U-VB demonstrates its excellent performance and wide applicability in high voltage and high current scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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