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K12A60D-VB Product details
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1. K12A60D-VB Product Introduction
K12A60D-VB is a single N-channel MOSFET in TO220F package with high voltage resistance and efficient switching characteristics. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, the on-resistance (RDS(ON)) is 320mΩ at a gate voltage of 10V, and it can provide a drain current of up to 20A. This MOSFET is designed with planar technology and is designed specifically for high-voltage applications, ensuring excellent performance and reliability in high-voltage circuits.
K12A60D-VB is a single N-channel MOSFET in TO220F package with high voltage resistance and efficient switching characteristics. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, the on-resistance (RDS(ON)) is 320mΩ at a gate voltage of 10V, and it can provide a drain current of up to 20A. This MOSFET is designed with planar technology and is designed specifically for high-voltage applications, ensuring excellent performance and reliability in high-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. K12A60D-VB Detailed Parameter Description
| Parameter | Value |
| ------------------------ | ------------------------- |
| **Model** | K12A60D-VB |
| **Package Type** | TO220F |
| **Configuration** | Single N-Channel|
| **Maximum Drain-Source Voltage (VDS)** | 650V |
| **Maximum Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 320mΩ @ VGS=10V |
| **Maximum Drain Current (ID)** | 20A |
| **Technology Type** | Planar |
| **Operating Temperature Range** | -55°C to 150°C |
| Parameter | Value |
| ------------------------ | ------------------------- |
| **Model** | K12A60D-VB |
| **Package Type** | TO220F |
| **Configuration** | Single N-Channel|
| **Maximum Drain-Source Voltage (VDS)** | 650V |
| **Maximum Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 320mΩ @ VGS=10V |
| **Maximum Drain Current (ID)** | 20A |
| **Technology Type** | Planar |
| **Operating Temperature Range** | -55°C to 150°C |
Domain and module applications：
III. Application fields and module examples
1. **Power inverter**
K12A60D-VB is suitable for high-voltage switching components in power inverters, especially in industrial or household inverters. Its high withstand voltage and low conduction loss characteristics can effectively improve the inverter efficiency and provide efficient energy conversion.
2. **High-voltage switching power supply**
This device can be used in high-voltage switching power supply designs, such as LED driver power supplies or high-efficiency battery chargers. The high withstand voltage capability of K12A60D-VB ensures that the device works stably and reliably under high-voltage input and output conditions.
3. **Electric vehicle charging pile**
In the charging module of electric vehicles, K12A60D-VB can be used to control the high-voltage charging current, and its stable switching characteristics can ensure the safety and reliability of the charging system.
4. **Industrial motor control**
This MOSFET can be used in industrial automation and motor control systems, especially those motors that require high-voltage drive. Its high withstand voltage and high current handling capabilities enable it to effectively drive and control high-power motor equipment.
5. **Smart meter and energy management system**
In smart meters or energy management systems, K12A60D-VB can be used as a high-voltage switch component to ensure that the meter safely and accurately controls the distribution and measurement of electricity in a high-voltage environment.
1. **Power inverter**
K12A60D-VB is suitable for high-voltage switching components in power inverters, especially in industrial or household inverters. Its high withstand voltage and low conduction loss characteristics can effectively improve the inverter efficiency and provide efficient energy conversion.
2. **High-voltage switching power supply**
This device can be used in high-voltage switching power supply designs, such as LED driver power supplies or high-efficiency battery chargers. The high withstand voltage capability of K12A60D-VB ensures that the device works stably and reliably under high-voltage input and output conditions.
3. **Electric vehicle charging pile**
In the charging module of electric vehicles, K12A60D-VB can be used to control the high-voltage charging current, and its stable switching characteristics can ensure the safety and reliability of the charging system.
4. **Industrial motor control**
This MOSFET can be used in industrial automation and motor control systems, especially those motors that require high-voltage drive. Its high withstand voltage and high current handling capabilities enable it to effectively drive and control high-power motor equipment.
5. **Smart meter and energy management system**
In smart meters or energy management systems, K12A60D-VB can be used as a high-voltage switch component to ensure that the meter safely and accurately controls the distribution and measurement of electricity in a high-voltage environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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