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K12A53D-VB Product details
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K12A53D-VB MOSFET Product Introduction
**K12A53D-VB** is a high-voltage N-type MOSFET in TO220F package, designed for various applications requiring medium and high voltage control. Its maximum drain-source voltage (VDS) is 650V, which can handle higher voltage power conversion requirements. The device has an on-resistance (RDS(ON)) of 680mΩ@VGS=10V, providing good efficiency and suitable for use in switching power supplies and industrial drives. The 12A current handling capability and Plannar technology make it adaptable to higher current conditions while maintaining reliable switching performance and low losses, suitable for high-efficiency power management applications.
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**K12A53D-VB** is a high-voltage N-type MOSFET in TO220F package, designed for various applications requiring medium and high voltage control. Its maximum drain-source voltage (VDS) is 650V, which can handle higher voltage power conversion requirements. The device has an on-resistance (RDS(ON)) of 680mΩ@VGS=10V, providing good efficiency and suitable for use in switching power supplies and industrial drives. The 12A current handling capability and Plannar technology make it adaptable to higher current conditions while maintaining reliable switching performance and low losses, suitable for high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- The TO220F package has a large heat dissipation surface and good thermal management performance, ensuring stable operation of the device in high-power applications.
2. **Configuration**: Single N-type channel
- The single-channel configuration provides simplified circuit design and is suitable for a variety of power conversion and control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is up to 650V, which is suitable for high-voltage conversion and control applications, ensuring the reliability of MOSFET in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The wide gate-source voltage range (±30V) increases the flexibility of operation and can adapt to different drive circuit design requirements.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage is 3.5V, which enables it to conduct at a higher gate voltage and provide stable switching performance.
6. **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- Lower on-resistance reduces power loss and helps improve system efficiency.
7. **Current Rating (ID)**: 12A
- The maximum continuous current is 12A, suitable for high current loads, and can withstand high power operations in industry and power management.
8. **Technology**: Plannar
- Adopting planar process technology with mature manufacturing process, it provides good high voltage resistance and thermal stability, suitable for high voltage applications.
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1. **Package**: TO220F
- The TO220F package has a large heat dissipation surface and good thermal management performance, ensuring stable operation of the device in high-power applications.
2. **Configuration**: Single N-type channel
- The single-channel configuration provides simplified circuit design and is suitable for a variety of power conversion and control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is up to 650V, which is suitable for high-voltage conversion and control applications, ensuring the reliability of MOSFET in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The wide gate-source voltage range (±30V) increases the flexibility of operation and can adapt to different drive circuit design requirements.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage is 3.5V, which enables it to conduct at a higher gate voltage and provide stable switching performance.
6. **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- Lower on-resistance reduces power loss and helps improve system efficiency.
7. **Current Rating (ID)**: 12A
- The maximum continuous current is 12A, suitable for high current loads, and can withstand high power operations in industry and power management.
8. **Technology**: Plannar
- Adopting planar process technology with mature manufacturing process, it provides good high voltage resistance and thermal stability, suitable for high voltage applications.
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Domain and module applications：
Application Examples
1. **Industrial Power**:
The K12A53D-VB is ideal for use in industrial switch mode power supplies (SMPS), which typically require high voltage and efficient power conversion. Its 650V VDS enables it to withstand high voltage conditions while providing low losses and efficient conversion performance.
2. **Lighting**:
In high voltage LED drivers, the K12A53D-VB provides stable current control, ensuring that LED lighting systems can operate efficiently while providing good dimming performance.
3. **Motor Drive**:
This MOSFET can be used in motor control applications, especially in high voltage motor drivers in industrial and household equipment, to effectively handle high current loads and provide reliable power management and drive capabilities.
4. **Solar Inverter**:
In solar inverters, K12A53D-VB can be used to convert DC to AC and handle high voltage input and output, providing stable power output and high efficiency.
5. **Electric Vehicle Charger**:
This device is suitable for high-voltage converters in electric vehicle charging systems, ensuring that the charger can safely handle high currents and achieve efficient power conversion.
Overall, **K12A53D-VB** is a reliable high-voltage MOSFET suitable for a wide range of power management and industrial applications. With its efficient power handling capabilities and reliable electrical characteristics, it provides an ideal solution for designing equipment that requires high-voltage conversion and high-current handling.
1. **Industrial Power**:
The K12A53D-VB is ideal for use in industrial switch mode power supplies (SMPS), which typically require high voltage and efficient power conversion. Its 650V VDS enables it to withstand high voltage conditions while providing low losses and efficient conversion performance.
2. **Lighting**:
In high voltage LED drivers, the K12A53D-VB provides stable current control, ensuring that LED lighting systems can operate efficiently while providing good dimming performance.
3. **Motor Drive**:
This MOSFET can be used in motor control applications, especially in high voltage motor drivers in industrial and household equipment, to effectively handle high current loads and provide reliable power management and drive capabilities.
4. **Solar Inverter**:
In solar inverters, K12A53D-VB can be used to convert DC to AC and handle high voltage input and output, providing stable power output and high efficiency.
5. **Electric Vehicle Charger**:
This device is suitable for high-voltage converters in electric vehicle charging systems, ensuring that the charger can safely handle high currents and achieve efficient power conversion.
Overall, **K12A53D-VB** is a reliable high-voltage MOSFET suitable for a wide range of power management and industrial applications. With its efficient power handling capabilities and reliable electrical characteristics, it provides an ideal solution for designing equipment that requires high-voltage conversion and high-current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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