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K12A10K3-VB Product details
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K12A10K3-VB MOSFET Product Introduction
K12A10K3-VB is an N-channel power MOSFET in TO220F package, suitable for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, gate voltage (VGS) is ±20V, threshold voltage (Vth) is 1.8V, and it can achieve fast response at low gate voltage. The on-resistance (RDS(ON)) of the device is 86mΩ (at VGS of 10V), and the drain current (ID) can reach a maximum of 18A. The design based on Trench technology ensures low conduction loss and good thermal performance, making it very suitable for use in circuits with high efficiency requirements, such as switching power supplies and motor drives.
K12A10K3-VB is an N-channel power MOSFET in TO220F package, suitable for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, gate voltage (VGS) is ±20V, threshold voltage (Vth) is 1.8V, and it can achieve fast response at low gate voltage. The on-resistance (RDS(ON)) of the device is 86mΩ (at VGS of 10V), and the drain current (ID) can reach a maximum of 18A. The design based on Trench technology ensures low conduction loss and good thermal performance, making it very suitable for use in circuits with high efficiency requirements, such as switching power supplies and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
K12A10K3-VB detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
K12A10K3-VB application areas and module examples
1. **Switching Mode Power Supply (SMPS)**: K12A10K3-VB can be used in switching mode power supplies. As an efficient switching element, it can reduce losses in power conversion and improve the overall efficiency of the system. It is suitable for applications such as laptop power adapters and desktop power modules.
2. **Motor Drive**: Its high current and low on-resistance make this MOSFET suitable for DC motor control, such as motor drive applications in power tools and industrial automation, providing stable current control and switching performance.
3. **Photovoltaic Inverter**: In solar photovoltaic inverters, K12A10K3-VB can be used as a key switching element to help achieve efficient DC to AC conversion and ensure that the system performs excellent performance under different load conditions.
4. **Battery Management System (BMS)**: This MOSFET can be used in battery management modules in electric vehicles or energy storage systems to control the battery charging and discharging process and ensure the stability and safety of the system.
5. **Load switch**: Due to its high withstand voltage and low conduction loss, this device is also suitable for use in load switch circuits, especially in applications that require fast response and high reliability, such as communication equipment and data center power supply modules.
K12A10K3-VB is widely used in various industrial and consumer electronics fields due to its efficient switching capability and reliability, especially in power conversion and motor control systems that require high efficiency and high reliability.
1. **Switching Mode Power Supply (SMPS)**: K12A10K3-VB can be used in switching mode power supplies. As an efficient switching element, it can reduce losses in power conversion and improve the overall efficiency of the system. It is suitable for applications such as laptop power adapters and desktop power modules.
2. **Motor Drive**: Its high current and low on-resistance make this MOSFET suitable for DC motor control, such as motor drive applications in power tools and industrial automation, providing stable current control and switching performance.
3. **Photovoltaic Inverter**: In solar photovoltaic inverters, K12A10K3-VB can be used as a key switching element to help achieve efficient DC to AC conversion and ensure that the system performs excellent performance under different load conditions.
4. **Battery Management System (BMS)**: This MOSFET can be used in battery management modules in electric vehicles or energy storage systems to control the battery charging and discharging process and ensure the stability and safety of the system.
5. **Load switch**: Due to its high withstand voltage and low conduction loss, this device is also suitable for use in load switch circuits, especially in applications that require fast response and high reliability, such as communication equipment and data center power supply modules.
K12A10K3-VB is widely used in various industrial and consumer electronics fields due to its efficient switching capability and reliability, especially in power conversion and motor control systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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