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K1292-VB Product details
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Product Introduction - K1292-VB MOSFET
K1292-VB is a high-performance single N-channel MOSFET designed in TO220F package, optimized for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V and the drain current (ID) can reach 18A, enabling it to perform well in a variety of power management and power conversion applications. The threshold voltage (Vth) of K1292-VB is 1.8V, which is suitable for low-voltage drive applications. In addition, its on-resistance (RDS(ON)) at a gate voltage of 10V is 86mΩ, ensuring low power operation under high current conditions. Using Trench technology, K1292-VB has superior switching characteristics and high efficiency, suitable for demanding electronic applications.
K1292-VB is a high-performance single N-channel MOSFET designed in TO220F package, optimized for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V and the drain current (ID) can reach 18A, enabling it to perform well in a variety of power management and power conversion applications. The threshold voltage (Vth) of K1292-VB is 1.8V, which is suitable for low-voltage drive applications. In addition, its on-resistance (RDS(ON)) at a gate voltage of 10V is 86mΩ, ensuring low power operation under high current conditions. Using Trench technology, K1292-VB has superior switching characteristics and high efficiency, suitable for demanding electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
- **Package Description**: TO220F package design optimizes heat dissipation, suitable for high-power applications, and can effectively reduce thermal resistance.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET performs well in switching and power management applications, suitable for power conversion and control.
3. **Drain-Source Voltage (VDS)**: 100V
- **Description**: The drain-source voltage of 100V is suitable for medium-voltage electronic applications, providing good electrical characteristics and reliability.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The gate-source voltage of ±20V allows flexible drive options and is suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 1.8V
- **Description**: The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **86mΩ@VGS=10V**
- **Description**: The low on-resistance ensures high efficiency at high current and reduces power loss.
7. **Drain current (ID)**: 18A
- **Description**: The high drain current capability of 18A makes the device suitable for applications with heavy loads.
8. **Technology type**: Trench
- **Description**: Trench technology provides superior current carrying capacity and low conduction loss, suitable for high frequency and high-efficiency circuits.
1. **Package Type**: TO220F
- **Package Description**: TO220F package design optimizes heat dissipation, suitable for high-power applications, and can effectively reduce thermal resistance.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET performs well in switching and power management applications, suitable for power conversion and control.
3. **Drain-Source Voltage (VDS)**: 100V
- **Description**: The drain-source voltage of 100V is suitable for medium-voltage electronic applications, providing good electrical characteristics and reliability.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The gate-source voltage of ±20V allows flexible drive options and is suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 1.8V
- **Description**: The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **86mΩ@VGS=10V**
- **Description**: The low on-resistance ensures high efficiency at high current and reduces power loss.
7. **Drain current (ID)**: 18A
- **Description**: The high drain current capability of 18A makes the device suitable for applications with heavy loads.
8. **Technology type**: Trench
- **Description**: Trench technology provides superior current carrying capacity and low conduction loss, suitable for high frequency and high-efficiency circuits.
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**:
K1292-VB is widely used in switching power supplies, especially in power adapters and chargers, and can provide stable power conversion at 100V to meet different load requirements.
2. **DC-DC Converter**:
In the DC-DC converter, this MOSFET can effectively convert voltage, which is suitable for battery management systems and portable devices to improve conversion efficiency.
3. **Motor Drive**:
K1292-VB can be used as a switching element in motor control circuits, suitable for high current applications, providing fast response and efficient motor drive solutions, such as power tools and home appliance motor drives.
4. **LED Drive Circuit**:
This MOSFET can be used as a switching element in LED lighting systems, effectively driving high-power LEDs, ensuring stable light output and improving energy efficiency, suitable for LED lamps and backlight applications.
5. **Automotive Electronic Applications**:
K1292-VB can be used for switching and control applications in automotive electronic systems, such as power windows, seat adjustments, and car audio systems, to meet the needs of high performance and reliability.
Through the above detailed product introduction, parameter description and application examples, K1292-VB MOSFET demonstrates its superior performance and wide applicability in medium voltage and high current applications.
1. **Switching Power Supply (SMPS)**:
K1292-VB is widely used in switching power supplies, especially in power adapters and chargers, and can provide stable power conversion at 100V to meet different load requirements.
2. **DC-DC Converter**:
In the DC-DC converter, this MOSFET can effectively convert voltage, which is suitable for battery management systems and portable devices to improve conversion efficiency.
3. **Motor Drive**:
K1292-VB can be used as a switching element in motor control circuits, suitable for high current applications, providing fast response and efficient motor drive solutions, such as power tools and home appliance motor drives.
4. **LED Drive Circuit**:
This MOSFET can be used as a switching element in LED lighting systems, effectively driving high-power LEDs, ensuring stable light output and improving energy efficiency, suitable for LED lamps and backlight applications.
5. **Automotive Electronic Applications**:
K1292-VB can be used for switching and control applications in automotive electronic systems, such as power windows, seat adjustments, and car audio systems, to meet the needs of high performance and reliability.
Through the above detailed product introduction, parameter description and application examples, K1292-VB MOSFET demonstrates its superior performance and wide applicability in medium voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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