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K1274-VB Product details
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Product Introduction - K1274-VB MOSFET
K1274-VB is a single N-channel MOSFET in TO220F package, designed for high-efficiency and high-current applications. Its maximum drain-source voltage (VDS) is 60V and the drain current (ID) can reach 45A, enabling it to perform well in a variety of power management and power conversion applications. The threshold voltage (Vth) of K1274-VB is 1.7V, which is suitable for low-voltage drive applications. At the same time, its on-resistance (RDS(ON)) is 27mΩ at a gate voltage of 10V, ensuring low-loss operation under high current conditions. This MOSFET adopts Trench technology, has excellent switching characteristics and high efficiency, and is suitable for demanding electronic applications.
K1274-VB is a single N-channel MOSFET in TO220F package, designed for high-efficiency and high-current applications. Its maximum drain-source voltage (VDS) is 60V and the drain current (ID) can reach 45A, enabling it to perform well in a variety of power management and power conversion applications. The threshold voltage (Vth) of K1274-VB is 1.7V, which is suitable for low-voltage drive applications. At the same time, its on-resistance (RDS(ON)) is 27mΩ at a gate voltage of 10V, ensuring low-loss operation under high current conditions. This MOSFET adopts Trench technology, has excellent switching characteristics and high efficiency, and is suitable for demanding electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
- **Package Description**: TO220F package design optimizes heat dissipation, suitable for high-power applications, and can effectively reduce thermal resistance.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET performs well in switching and power management applications, suitable for power conversion and control.
3. **Drain-Source Voltage (VDS)**: 60V
- **Description**: The 60V drain-source voltage is suitable for medium-voltage electronic applications, providing good electrical characteristics and reliability.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage allows flexible drive options and is suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 1.7V
- **Description**: The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **27mΩ@VGS=10V**
- **Description**: The low on-resistance ensures high efficiency at high current and reduces power loss.
7. **Drain current (ID)**: 45A
- **Description**: The high drain current capability of 45A makes the device suitable for applications with heavy loads.
8. **Technology type**: Trench
- **Description**: Trench technology provides superior current carrying capacity and low conduction loss, suitable for high frequency and high-efficiency circuits.
1. **Package Type**: TO220F
- **Package Description**: TO220F package design optimizes heat dissipation, suitable for high-power applications, and can effectively reduce thermal resistance.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET performs well in switching and power management applications, suitable for power conversion and control.
3. **Drain-Source Voltage (VDS)**: 60V
- **Description**: The 60V drain-source voltage is suitable for medium-voltage electronic applications, providing good electrical characteristics and reliability.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage allows flexible drive options and is suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 1.7V
- **Description**: The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **27mΩ@VGS=10V**
- **Description**: The low on-resistance ensures high efficiency at high current and reduces power loss.
7. **Drain current (ID)**: 45A
- **Description**: The high drain current capability of 45A makes the device suitable for applications with heavy loads.
8. **Technology type**: Trench
- **Description**: Trench technology provides superior current carrying capacity and low conduction loss, suitable for high frequency and high-efficiency circuits.
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**:
K1274-VB is widely used in switching power supplies for high-efficiency power conversion. It can operate stably at 60V voltage to meet various power requirements and is suitable for adapters and chargers, etc.
2. **DC-DC Converter**:
In DC-DC converters, this MOSFET can effectively perform voltage conversion and is suitable for battery management systems and portable devices.
3. **Motor Drive**:
K1274-VB can be used as a switching element in motor control circuits, supporting high current applications, providing fast response and efficient motor drive solutions.
4. **LED Drive Circuit**:
In LED lighting systems, K1274-VB can be used as an efficient switching element to effectively drive high-power LEDs to ensure stable light output and long life.
5. **Automotive Electronic Application**:
This device is also suitable for various switching and control applications in automotive electronic systems, which can meet the needs of high performance and reliability, such as power windows, seat adjustment, etc.
Through the above detailed product introduction, parameter description and application examples, K1274-VB MOSFET demonstrates its superior performance and wide applicability in high-efficiency and high-current applications.
1. **Switching Power Supply (SMPS)**:
K1274-VB is widely used in switching power supplies for high-efficiency power conversion. It can operate stably at 60V voltage to meet various power requirements and is suitable for adapters and chargers, etc.
2. **DC-DC Converter**:
In DC-DC converters, this MOSFET can effectively perform voltage conversion and is suitable for battery management systems and portable devices.
3. **Motor Drive**:
K1274-VB can be used as a switching element in motor control circuits, supporting high current applications, providing fast response and efficient motor drive solutions.
4. **LED Drive Circuit**:
In LED lighting systems, K1274-VB can be used as an efficient switching element to effectively drive high-power LEDs to ensure stable light output and long life.
5. **Automotive Electronic Application**:
This device is also suitable for various switching and control applications in automotive electronic systems, which can meet the needs of high performance and reliability, such as power windows, seat adjustment, etc.
Through the above detailed product introduction, parameter description and application examples, K1274-VB MOSFET demonstrates its superior performance and wide applicability in high-efficiency and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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