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K1257-VB Product details
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K1257-VB MOSFET Product Introduction
**K1257-VB** is a high-efficiency N-type MOSFET in TO220F package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 60V, suitable for use in power management and switching applications. The threshold voltage (Vth) of K1257-VB is 1.7V, which means that it can be turned on at a lower gate voltage, suitable for circuits requiring fast switching. The device has an on-resistance (RDS(ON)) of 27mΩ at VGS=10V, ensuring low conduction losses and improving the overall efficiency of the system. With its Trench technology, this MOSFET provides excellent thermal management performance and reliability, suitable for operation in harsh environments.
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**K1257-VB** is a high-efficiency N-type MOSFET in TO220F package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 60V, suitable for use in power management and switching applications. The threshold voltage (Vth) of K1257-VB is 1.7V, which means that it can be turned on at a lower gate voltage, suitable for circuits requiring fast switching. The device has an on-resistance (RDS(ON)) of 27mΩ at VGS=10V, ensuring low conduction losses and improving the overall efficiency of the system. With its Trench technology, this MOSFET provides excellent thermal management performance and reliability, suitable for operation in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- The TO220F package design provides good heat dissipation performance, suitable for high-power applications, and can effectively reduce the operating temperature.
2. **Configuration**: Single N-type channel
- The single-channel configuration is suitable for a variety of current management applications, ensuring flexibility and high efficiency.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, making it suitable for medium-voltage power management circuits to meet a variety of application requirements.
4. **Gate-source voltage (VGS)**: ±20V
- The high gate-source voltage is limited to ±20V, ensuring a safe operating range and providing reliability for a variety of circuits.
5. **Threshold Voltage (Vth)**: 1.7V
- The lower threshold voltage allows the MOSFET to turn on quickly at a lower gate voltage, improving switching speed and response time.
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
- Low on-resistance reduces conduction losses, improving overall circuit efficiency and performance.
7. **Current Rating (ID)**: 45A
- Maximum continuous current of 45A is suitable for a variety of high current applications, ensuring device stability under high load conditions.
8. **Technology**: Trench
- Manufactured using Trench technology, ensuring excellent performance and stability in high temperature and high frequency applications.
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1. **Package**: TO220F
- The TO220F package design provides good heat dissipation performance, suitable for high-power applications, and can effectively reduce the operating temperature.
2. **Configuration**: Single N-type channel
- The single-channel configuration is suitable for a variety of current management applications, ensuring flexibility and high efficiency.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, making it suitable for medium-voltage power management circuits to meet a variety of application requirements.
4. **Gate-source voltage (VGS)**: ±20V
- The high gate-source voltage is limited to ±20V, ensuring a safe operating range and providing reliability for a variety of circuits.
5. **Threshold Voltage (Vth)**: 1.7V
- The lower threshold voltage allows the MOSFET to turn on quickly at a lower gate voltage, improving switching speed and response time.
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
- Low on-resistance reduces conduction losses, improving overall circuit efficiency and performance.
7. **Current Rating (ID)**: 45A
- Maximum continuous current of 45A is suitable for a variety of high current applications, ensuring device stability under high load conditions.
8. **Technology**: Trench
- Manufactured using Trench technology, ensuring excellent performance and stability in high temperature and high frequency applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply (SMPS)**:
K1257-VB is widely used in switching power supply design, which can efficiently convert electrical energy and is suitable for power adapters, LED drivers and industrial power modules to improve system efficiency.
2. **Power Tools**:
This MOSFET can be used in power tools to control the start and stop and speed regulation of the motor to ensure efficient operation and responsiveness of the tool.
3. **Motor Drive System**:
K1257-VB is suitable for various motor drive systems, including motor control in household appliances and industrial equipment, providing stable current output and ensuring equipment reliability.
4. **Power Management Circuit**:
In the power management circuit, K1257-VB can achieve efficient current switch control, ensure voltage regulation and overcurrent protection, and improve equipment safety and performance.
5. **LED Lighting**:
This MOSFET can be used in LED drive circuits to support efficient switch control and dimming functions, improving the energy efficiency and flexibility of LED lighting systems.
In summary, K1257-VB is a high-performance N-type MOSFET. With its superior electrical characteristics and wide range of applications, it can meet the needs of a variety of devices with medium voltage and high current requirements, providing a reliable solution for power management and control systems.
1. **Switching Power Supply (SMPS)**:
K1257-VB is widely used in switching power supply design, which can efficiently convert electrical energy and is suitable for power adapters, LED drivers and industrial power modules to improve system efficiency.
2. **Power Tools**:
This MOSFET can be used in power tools to control the start and stop and speed regulation of the motor to ensure efficient operation and responsiveness of the tool.
3. **Motor Drive System**:
K1257-VB is suitable for various motor drive systems, including motor control in household appliances and industrial equipment, providing stable current output and ensuring equipment reliability.
4. **Power Management Circuit**:
In the power management circuit, K1257-VB can achieve efficient current switch control, ensure voltage regulation and overcurrent protection, and improve equipment safety and performance.
5. **LED Lighting**:
This MOSFET can be used in LED drive circuits to support efficient switch control and dimming functions, improving the energy efficiency and flexibility of LED lighting systems.
In summary, K1257-VB is a high-performance N-type MOSFET. With its superior electrical characteristics and wide range of applications, it can meet the needs of a variety of devices with medium voltage and high current requirements, providing a reliable solution for power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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