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K11A50D-VB Product details
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K11A50D-VB MOSFET Product Introduction
**K11A50D-VB** is a high-performance N-type MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 550V, which is suitable for working in high voltage environments and can meet various power management needs. The threshold voltage (Vth) of the device is 3V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of K11A50D-VB is 260mΩ at VGS=10V, providing good conductivity and reducing energy loss. This MOSFET is manufactured using Plannar technology to ensure its stability and reliability in high temperature and high frequency applications.
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**K11A50D-VB** is a high-performance N-type MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 550V, which is suitable for working in high voltage environments and can meet various power management needs. The threshold voltage (Vth) of the device is 3V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of K11A50D-VB is 260mΩ at VGS=10V, providing good conductivity and reducing energy loss. This MOSFET is manufactured using Plannar technology to ensure its stability and reliability in high temperature and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- The TO220F package provides excellent heat dissipation performance, suitable for high-power applications, and can effectively reduce the operating temperature.
2. **Configuration**: Single N-type channel
- The single-channel configuration makes it suitable for efficient current management, ensuring flexibility in a variety of applications.
3. **Drain-source voltage (VDS)**: 550V
- The maximum drain-source voltage is 550V, making it perform well in high-voltage circuits and suitable for power converters and drive circuits.
4. **Gate-source voltage (VGS)**: ±30V
- The high gate-source voltage limit is ±30V, providing room for safe operation and ensuring the reliability of the device under different operating conditions.
5. **Threshold Voltage (Vth)**: 3V
- The lower threshold voltage enables the MOSFET to turn on quickly at a lower gate voltage, increasing the switching speed.
6. **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- The lower on-resistance reduces conduction losses and improves the overall efficiency of the circuit.
7. **Current Rating (ID)**: 18A
- The maximum continuous current is 18A, which is suitable for a variety of medium current application requirements and ensures the stability and safety of the device.
8. **Technology**: Plannar
- Manufactured using Plannar technology, ensuring excellent performance and stability in high temperature and high frequency applications.
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1. **Package**: TO220F
- The TO220F package provides excellent heat dissipation performance, suitable for high-power applications, and can effectively reduce the operating temperature.
2. **Configuration**: Single N-type channel
- The single-channel configuration makes it suitable for efficient current management, ensuring flexibility in a variety of applications.
3. **Drain-source voltage (VDS)**: 550V
- The maximum drain-source voltage is 550V, making it perform well in high-voltage circuits and suitable for power converters and drive circuits.
4. **Gate-source voltage (VGS)**: ±30V
- The high gate-source voltage limit is ±30V, providing room for safe operation and ensuring the reliability of the device under different operating conditions.
5. **Threshold Voltage (Vth)**: 3V
- The lower threshold voltage enables the MOSFET to turn on quickly at a lower gate voltage, increasing the switching speed.
6. **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- The lower on-resistance reduces conduction losses and improves the overall efficiency of the circuit.
7. **Current Rating (ID)**: 18A
- The maximum continuous current is 18A, which is suitable for a variety of medium current application requirements and ensures the stability and safety of the device.
8. **Technology**: Plannar
- Manufactured using Plannar technology, ensuring excellent performance and stability in high temperature and high frequency applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply (SMPS)**:
K11A50D-VB is widely used in switching power supplies, which can efficiently convert electrical energy and is suitable for power adapters, chargers and industrial power modules to improve overall efficiency.
2. **Inverter**:
This MOSFET can be used in inverters, especially in solar and wind power generation systems, responsible for converting DC power into AC power to improve power utilization.
3. **Motor Drive**:
K11A50D-VB performs well in motor control systems and is suitable for various occasions of power tools and motor drives to provide stable current management.
4. **LED Drive**:
In LED lighting applications, K11A50D-VB can provide efficient switch control, support intelligent lighting and dimming systems, improve lighting efficiency and energy saving effects.
5. **Power protection circuit**:
This MOSFET can be used in power protection circuits to provide overvoltage and overcurrent protection, ensure the safety of other electronic components, and is widely used in various electrical equipment.
In summary, K11A50D-VB is an N-type MOSFET with superior performance and wide application range. It can meet the needs of a variety of high voltage and medium current applications, and provide guarantee for the efficient and safe operation of equipment.
1. **Switching Power Supply (SMPS)**:
K11A50D-VB is widely used in switching power supplies, which can efficiently convert electrical energy and is suitable for power adapters, chargers and industrial power modules to improve overall efficiency.
2. **Inverter**:
This MOSFET can be used in inverters, especially in solar and wind power generation systems, responsible for converting DC power into AC power to improve power utilization.
3. **Motor Drive**:
K11A50D-VB performs well in motor control systems and is suitable for various occasions of power tools and motor drives to provide stable current management.
4. **LED Drive**:
In LED lighting applications, K11A50D-VB can provide efficient switch control, support intelligent lighting and dimming systems, improve lighting efficiency and energy saving effects.
5. **Power protection circuit**:
This MOSFET can be used in power protection circuits to provide overvoltage and overcurrent protection, ensure the safety of other electronic components, and is widely used in various electrical equipment.
In summary, K11A50D-VB is an N-type MOSFET with superior performance and wide application range. It can meet the needs of a variety of high voltage and medium current applications, and provide guarantee for the efficient and safe operation of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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