中文
English
K1170-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**K1170-VB** is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 600V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) can withstand ±30V, ensuring the safety and stability of the device under harsh conditions. The threshold voltage (Vth) of K1170-VB is 3.5V, and when VGS = 10V, the on-resistance (RDS(ON)) is only 190mΩ, which greatly reduces power consumption and heat. The use of SJ_Multi-EPI technology makes this MOSFET excellent in efficiency and reliability, suitable for various industrial and consumer electronics applications.
**K1170-VB** is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 600V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) can withstand ±30V, ensuring the safety and stability of the device under harsh conditions. The threshold voltage (Vth) of K1170-VB is 3.5V, and when VGS = 10V, the on-resistance (RDS(ON)) is only 190mΩ, which greatly reduces power consumption and heat. The use of SJ_Multi-EPI technology makes this MOSFET excellent in efficiency and reliability, suitable for various industrial and consumer electronics applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K1170-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 600V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 190mΩ (at VGS = 10V)
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: K1170-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 600V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 190mΩ (at VGS = 10V)
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
1. **High-voltage Switching Power Supply**: The K1170-VB is ideal for use in switching power supply (SMPS) designs, especially those applications that require efficient conversion at high voltages, such as industrial power supplies and server power systems.
2. **Motor Drive**: In motor control systems, this MOSFET can be used as a high-voltage switch for driving DC motors and stepper motors to achieve high efficiency and fast response.
3. **LED Lighting**: Due to its excellent conduction characteristics, the K1170-VB can be used in LED drive circuits to stably control the current of high-power LEDs, thereby improving the efficiency and service life of LED lighting systems.
4. **Inverter Application**: In solar inverters and UPS systems, the K1170-VB can be used as a key switching element to support efficient power conversion and management.
5. **Automotive Electronics**: This MOSFET can be applied to automotive power management systems, such as electric power steering, brake control and other modules, providing efficient and reliable performance to meet the requirements of modern automobiles.
In summary, K1170-VB is a high-voltage and high-efficiency N-channel MOSFET suitable for a wide range of high-voltage applications, which can effectively improve the performance and reliability of electronic equipment.
1. **High-voltage Switching Power Supply**: The K1170-VB is ideal for use in switching power supply (SMPS) designs, especially those applications that require efficient conversion at high voltages, such as industrial power supplies and server power systems.
2. **Motor Drive**: In motor control systems, this MOSFET can be used as a high-voltage switch for driving DC motors and stepper motors to achieve high efficiency and fast response.
3. **LED Lighting**: Due to its excellent conduction characteristics, the K1170-VB can be used in LED drive circuits to stably control the current of high-power LEDs, thereby improving the efficiency and service life of LED lighting systems.
4. **Inverter Application**: In solar inverters and UPS systems, the K1170-VB can be used as a key switching element to support efficient power conversion and management.
5. **Automotive Electronics**: This MOSFET can be applied to automotive power management systems, such as electric power steering, brake control and other modules, providing efficient and reliable performance to meet the requirements of modern automobiles.
In summary, K1170-VB is a high-voltage and high-efficiency N-channel MOSFET suitable for a wide range of high-voltage applications, which can effectively improve the performance and reliability of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
