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K1169-VB Product details
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K1169-VB MOSFET Product Introduction:
**K1169-VB** is a high-efficiency single N-channel MOSFET designed for high voltage and high current applications. Its drain-source voltage (VDS) is rated at 600V and its maximum drain current (ID) is 20A, making it suitable for use in harsh electrical environments. Using SJ_Multi-EPI technology, K1169-VB has a lower 190mΩ on-resistance (RDS(ON)@VGS=10V), thereby reducing power consumption while improving the overall efficiency of the system. This MOSFET is suitable for a variety of power electronic equipment, ensuring reliable and stable performance.
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**K1169-VB** is a high-efficiency single N-channel MOSFET designed for high voltage and high current applications. Its drain-source voltage (VDS) is rated at 600V and its maximum drain current (ID) is 20A, making it suitable for use in harsh electrical environments. Using SJ_Multi-EPI technology, K1169-VB has a lower 190mΩ on-resistance (RDS(ON)@VGS=10V), thereby reducing power consumption while improving the overall efficiency of the system. This MOSFET is suitable for a variety of power electronic equipment, ensuring reliable and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description of K1169-VB:
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **@VGS=10V**: 190mΩ
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Operating temperature range**: Generally -55°C to 150°C (depending on manufacturer's detailed information)
- **Power dissipation (PD)**: Based on the limitations of the TO3P package, further confirmation is required.
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- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **@VGS=10V**: 190mΩ
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Operating temperature range**: Generally -55°C to 150°C (depending on manufacturer's detailed information)
- **Power dissipation (PD)**: Based on the limitations of the TO3P package, further confirmation is required.
---
Domain and module applications：
Applicable fields and examples:
1. **Power converter**:
K1169-VB is very suitable for use in **DC-DC converter**, which can withstand high voltage of 600V, provide high efficiency and stability, and is suitable for power management of power adapters, industrial power supplies and communication equipment.
2. **Motor drive**:
This MOSFET can be used in **motor control** systems, especially AC and DC motor drive applications in industrial automation and home appliances, supporting high current processing to ensure stable and efficient operation of the motor.
3. **Solar inverter**:
K1169-VB performs well in **solar inverter**, which can efficiently convert and control the output power of solar cells. It is suitable for home and commercial photovoltaic systems to help the effective use of renewable energy.
4. **Lighting control**:
This device is also suitable for **LED lighting driver**. Its low on-resistance can effectively improve the efficiency of LED driver power supply. It is widely used in intelligent lighting systems to optimize energy consumption and light efficiency.
5. **Power amplifier**:
In **radio frequency (RF) power amplifier** and related equipment, K1169-VB can provide high voltage and high efficiency, suitable for communication equipment and RF applications, ensuring the stability and quality of signal transmission.
In summary, **K1169-VB** is a high-performance N-channel MOSFET. With its excellent electrical performance and wide range of applications, it has become an ideal choice in power management and switching circuits, providing strong support for a variety of industrial and consumer electronic devices.
1. **Power converter**:
K1169-VB is very suitable for use in **DC-DC converter**, which can withstand high voltage of 600V, provide high efficiency and stability, and is suitable for power management of power adapters, industrial power supplies and communication equipment.
2. **Motor drive**:
This MOSFET can be used in **motor control** systems, especially AC and DC motor drive applications in industrial automation and home appliances, supporting high current processing to ensure stable and efficient operation of the motor.
3. **Solar inverter**:
K1169-VB performs well in **solar inverter**, which can efficiently convert and control the output power of solar cells. It is suitable for home and commercial photovoltaic systems to help the effective use of renewable energy.
4. **Lighting control**:
This device is also suitable for **LED lighting driver**. Its low on-resistance can effectively improve the efficiency of LED driver power supply. It is widely used in intelligent lighting systems to optimize energy consumption and light efficiency.
5. **Power amplifier**:
In **radio frequency (RF) power amplifier** and related equipment, K1169-VB can provide high voltage and high efficiency, suitable for communication equipment and RF applications, ensuring the stability and quality of signal transmission.
In summary, **K1169-VB** is a high-performance N-channel MOSFET. With its excellent electrical performance and wide range of applications, it has become an ideal choice in power management and switching circuits, providing strong support for a variety of industrial and consumer electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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