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K1168-VB Product details
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Product Introduction - K1168-VB MOSFET
The K1168-VB is a single N-channel MOSFET in a TO3P package, designed for high voltage applications with excellent current handling capability and thermal stability. Its drain-source voltage (VDS) is up to 600V, suitable for handling harsh high voltage environments. The gate-source voltage (VGS) range of the K1168-VB is ±30V, providing flexible drive options. The device has an on-resistance (RDS(ON)) of 280mΩ at a gate voltage of 10V and supports a continuous drain current (ID) of up to 15A. With SJ_Multi-EPI technology, the K1168-VB achieves excellent performance and is suitable for a variety of power conversion and switching applications.
The K1168-VB is a single N-channel MOSFET in a TO3P package, designed for high voltage applications with excellent current handling capability and thermal stability. Its drain-source voltage (VDS) is up to 600V, suitable for handling harsh high voltage environments. The gate-source voltage (VGS) range of the K1168-VB is ±30V, providing flexible drive options. The device has an on-resistance (RDS(ON)) of 280mΩ at a gate voltage of 10V and supports a continuous drain current (ID) of up to 15A. With SJ_Multi-EPI technology, the K1168-VB achieves excellent performance and is suitable for a variety of power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Parameter Description
1. **Package Type**: TO3P
- **Package Description**: TO3P package has good heat dissipation capability, suitable for high power and high voltage application environment, ensuring the stability of the device.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET exhibits high efficiency performance in switching and amplification applications, suitable for a wide range of power and control applications.
3. **Drain-Source Voltage (VDS)**: 600V
- **Description**: The 600V drain-source voltage enables the device to operate in high voltage applications, suitable for a variety of power and switching circuits.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The ±30V gate-source voltage range provides flexible drive options, suitable for a variety of control circuit requirements.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The threshold voltage of 3.5V means that the device can only be turned on at a higher gate voltage, which is suitable for high voltage drive requirements.
6. **On-resistance (RDS(ON))**:
- **280mΩ@VGS=10V**
- **Description**: At a gate voltage of 10V, the on-resistance of 280mΩ helps reduce power loss and improve overall efficiency.
7. **Drain current (ID)**: 15A
- **Description**: The drain current capability of 15A is suitable for a variety of medium current applications and can meet the needs of larger loads.
8. **Technology type**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides excellent electrical performance and temperature stability, suitable for high temperature and high voltage environments.
1. **Package Type**: TO3P
- **Package Description**: TO3P package has good heat dissipation capability, suitable for high power and high voltage application environment, ensuring the stability of the device.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFET exhibits high efficiency performance in switching and amplification applications, suitable for a wide range of power and control applications.
3. **Drain-Source Voltage (VDS)**: 600V
- **Description**: The 600V drain-source voltage enables the device to operate in high voltage applications, suitable for a variety of power and switching circuits.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The ±30V gate-source voltage range provides flexible drive options, suitable for a variety of control circuit requirements.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The threshold voltage of 3.5V means that the device can only be turned on at a higher gate voltage, which is suitable for high voltage drive requirements.
6. **On-resistance (RDS(ON))**:
- **280mΩ@VGS=10V**
- **Description**: At a gate voltage of 10V, the on-resistance of 280mΩ helps reduce power loss and improve overall efficiency.
7. **Drain current (ID)**: 15A
- **Description**: The drain current capability of 15A is suitable for a variety of medium current applications and can meet the needs of larger loads.
8. **Technology type**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides excellent electrical performance and temperature stability, suitable for high temperature and high voltage environments.
Domain and module applications：
Applications and modules
1. **Power converter**:
K1168-VB is widely used in power management circuits such as switching power supplies (SMPS) and DC-DC converters, and can efficiently convert and regulate power at a high voltage of 600V.
2. **High-voltage motor drive**:
In motor control systems, K1168-VB can be used as an efficient switching element and is suitable for motor drives, especially industrial equipment that requires high voltage and high current.
3. **Solar inverter**:
This MOSFET is very suitable for use in solar inverters, which can effectively convert the DC power generated by solar cells to AC power, ensuring efficient use of energy.
4. **LED driver power**:
K1168-VB can be applied to LED lighting systems, providing high-voltage drive and stable control, suitable for high-power LED lighting modules.
5. **Power Electronics Application**:
In high voltage and high power power electronics applications, K1168-VB can be used as a key switching element for switching and control functions in power systems to ensure system reliability and efficiency.
Through the above detailed product introduction, parameter description and application examples, K1168-VB MOSFET demonstrates its excellent performance and wide applicability in high voltage and medium current applications.
1. **Power converter**:
K1168-VB is widely used in power management circuits such as switching power supplies (SMPS) and DC-DC converters, and can efficiently convert and regulate power at a high voltage of 600V.
2. **High-voltage motor drive**:
In motor control systems, K1168-VB can be used as an efficient switching element and is suitable for motor drives, especially industrial equipment that requires high voltage and high current.
3. **Solar inverter**:
This MOSFET is very suitable for use in solar inverters, which can effectively convert the DC power generated by solar cells to AC power, ensuring efficient use of energy.
4. **LED driver power**:
K1168-VB can be applied to LED lighting systems, providing high-voltage drive and stable control, suitable for high-power LED lighting modules.
5. **Power Electronics Application**:
In high voltage and high power power electronics applications, K1168-VB can be used as a key switching element for switching and control functions in power systems to ensure system reliability and efficiency.
Through the above detailed product introduction, parameter description and application examples, K1168-VB MOSFET demonstrates its excellent performance and wide applicability in high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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