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K1167-VB Product details
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1. K1167-VB Product Introduction
K1167-VB is a high-voltage single N-channel MOSFET designed for power management applications requiring high reliability and high efficiency. Its maximum drain-source voltage (VDS) can reach 600V, suitable for various industrial and commercial applications. The device adopts TO3P package, has excellent thermal management performance, and can operate stably in a high power density environment. The threshold voltage (Vth) of K1167-VB is 3.5V, and the on-resistance (RDS(ON)) is 280mΩ at a gate voltage of 10V, ensuring low power operation. This MOSFET adopts SJ_Multi-EPI technology, with excellent conduction performance and low switching losses, making it an important component of modern power electronic equipment.
K1167-VB is a high-voltage single N-channel MOSFET designed for power management applications requiring high reliability and high efficiency. Its maximum drain-source voltage (VDS) can reach 600V, suitable for various industrial and commercial applications. The device adopts TO3P package, has excellent thermal management performance, and can operate stably in a high power density environment. The threshold voltage (Vth) of K1167-VB is 3.5V, and the on-resistance (RDS(ON)) is 280mΩ at a gate voltage of 10V, ensuring low power operation. This MOSFET adopts SJ_Multi-EPI technology, with excellent conduction performance and low switching losses, making it an important component of modern power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description of K1167-VB
| Parameter | Value |
| ------------------------ | ---------------------- |
| **Model** | K1167-VB |
| **Package type** | TO3P |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 600V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 280mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 15A |
| **Technology type** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to 150°C |
| Parameter | Value |
| ------------------------ | ---------------------- |
| **Model** | K1167-VB |
| **Package type** | TO3P |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 600V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 280mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 15A |
| **Technology type** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to 150°C |
Domain and module applications：
3. Application fields and module examples
1. **Switching power supply**
K1167-VB is very suitable for switching power supply (SMPS) design. Due to its high withstand voltage and low on-resistance, the MOSFET can operate safely and stably at voltages up to 600V, thereby improving the efficiency and reliability of the power supply. This makes K1167-VB an ideal choice for power adapters, chargers and other power modules.
2. **High-voltage motor control**
The device can be used in high-voltage motor control applications, especially in industrial drive systems. The high current handling capability and fast switching characteristics of K1167-VB enable it to effectively control the start and stop and speed regulation of the motor, improving the response speed and energy efficiency of the system.
3. **Inverter application**
K1167-VB is suitable for inverter design, especially in renewable energy applications (such as solar and wind inverters), which can convert DC power to AC power. Its high voltage and high efficiency make this MOSFET perform well in inverter circuits, ensuring the stability and reliability of the system.
4. **Power Management IC**
In power management ICs, K1167-VB can be used for power switches, overvoltage protection, and other protection circuits. The high performance of this device makes it play an important role in improving circuit efficiency and protecting circuits, and is widely used in consumer electronics and industrial equipment.
5. **Automotive Electronics**
K1167-VB can also be used in the automotive electronics field, such as electric power steering systems and on-board power conversion modules. Its high reliability and high temperature resistance enable it to meet the operating requirements of automobiles in harsh environments and ensure the long-term stability of electronic control systems.
1. **Switching power supply**
K1167-VB is very suitable for switching power supply (SMPS) design. Due to its high withstand voltage and low on-resistance, the MOSFET can operate safely and stably at voltages up to 600V, thereby improving the efficiency and reliability of the power supply. This makes K1167-VB an ideal choice for power adapters, chargers and other power modules.
2. **High-voltage motor control**
The device can be used in high-voltage motor control applications, especially in industrial drive systems. The high current handling capability and fast switching characteristics of K1167-VB enable it to effectively control the start and stop and speed regulation of the motor, improving the response speed and energy efficiency of the system.
3. **Inverter application**
K1167-VB is suitable for inverter design, especially in renewable energy applications (such as solar and wind inverters), which can convert DC power to AC power. Its high voltage and high efficiency make this MOSFET perform well in inverter circuits, ensuring the stability and reliability of the system.
4. **Power Management IC**
In power management ICs, K1167-VB can be used for power switches, overvoltage protection, and other protection circuits. The high performance of this device makes it play an important role in improving circuit efficiency and protecting circuits, and is widely used in consumer electronics and industrial equipment.
5. **Automotive Electronics**
K1167-VB can also be used in the automotive electronics field, such as electric power steering systems and on-board power conversion modules. Its high reliability and high temperature resistance enable it to meet the operating requirements of automobiles in harsh environments and ensure the long-term stability of electronic control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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